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Matrix plainification leads to high thermoelectric performance in plastic Cu2Se/SnSe composites

Author

Listed:
  • Pan Ying

    (Nanjing University of Science and Technology)

  • Qingyang Jian

    (Nanjing University of Science and Technology)

  • Yaru Gong

    (Nanjing University of Science and Technology)

  • Tong Song

    (Xi’an Jiaotong University)

  • Yuxuan Yang

    (Xi’an Jiaotong University)

  • Yang Geng

    (Nanjing University of Science and Technology)

  • Junquan Huang

    (Yanshan University)

  • Rongxin Sun

    (Yanshan University)

  • Chen Chen

    (Yanshan University)

  • Tao Shen

    (Yanshan University)

  • Yanan Li

    (Nanjing University of Science and Technology)

  • Wei Dou

    (Nanjing University of Science and Technology)

  • Congmin Liang

    (Nanjing University of Science and Technology)

  • Yuqi Liu

    (Nanjing University of Science and Technology)

  • Deshang Xiang

    (Nanjing University of Science and Technology)

  • Tao Feng

    (Nanjing University of Science and Technology)

  • Xiaoyu Fei

    (Qufu Normal University)

  • Yongsheng Zhang

    (Qufu Normal University)

  • Kun Song

    (Nanjing Tech University)

  • Yang Zhang

    (Xi’an Jiaotong University)

  • Haijun Wu

    (Xi’an Jiaotong University)

  • Guodong Tang

    (Nanjing University of Science and Technology)

Abstract

Thermoelectric technology exhibits significant potential for power generation and electronic cooling. In this study, we report the achievement of exceptional thermoelectric performance and high plasticity in stable Cu2Se/SnSe composites. A novel matrix plainification strategy was employed to eliminate lattice vacancies within the Cu2Se matrix of the Cu2Se/SnSe composites, resulting in a marked improvement in carrier mobility and power factor. The presence of quasi-coherent interfaces induces phonon scattering, reducing lattice thermal conductivity without compromising carrier mobility. Consequently, a high figure of merit (ZT) of 3.3 was attained in the Cu2Se/5 wt.% Sn0.96Pb0.01Zn0.03Se composite. Additionally, the presence of high-density nanotwins imparts remarkable plasticity to the composite, yielding a compressive strain of 12%. The secondary phase contributes to the stability of the composite by hindering the extensive migration of Cu ions through bonding interactions. Our findings present a novel strategy for enhancing the thermoelectric performance of composite semiconductors, with potential applicability to other thermoelectric systems.

Suggested Citation

  • Pan Ying & Qingyang Jian & Yaru Gong & Tong Song & Yuxuan Yang & Yang Geng & Junquan Huang & Rongxin Sun & Chen Chen & Tao Shen & Yanan Li & Wei Dou & Congmin Liang & Yuqi Liu & Deshang Xiang & Tao Fe, 2025. "Matrix plainification leads to high thermoelectric performance in plastic Cu2Se/SnSe composites," Nature Communications, Nature, vol. 16(1), pages 1-12, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-58484-0
    DOI: 10.1038/s41467-025-58484-0
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