Author
Listed:
- Nan-Hai Li
(Queensland University of Technology)
- Xiao-Lei Shi
(Queensland University of Technology)
- Si-Qi Liu
(Queensland University of Technology)
- Meng Li
(Queensland University of Technology)
- Tian-Yi Cao
(Queensland University of Technology)
- Min Zhang
(Queensland University of Technology)
- Wan-Yu Lyu
(Queensland University of Technology)
- Wei-Di Liu
(Queensland University of Technology)
- Dong-Chen Qi
(Queensland University of Technology)
- Zhi-Gang Chen
(Queensland University of Technology)
Abstract
AgCu(Te, Se, S) alloys, as one of the rare p-type plastic inorganic thermoelectrics, are receiving striking attention for their application foreground in high-performing flexible thermoelectric generators. However, strategies to enhance their thermoelectric performance while maintaining exceptional plasticity remain largely unexplored. Here, we introduce a strategic vacancy-engineering approach to address this challenge. Using computational design as a guide, we carefully tune the cation vacancy concentration to optimize hole carrier concentration, achieving impressive ZTs of ~0.62 at 300 K and ~0.83 at 343 K in (AgCu)0.998Te0.8Se0.1S0.1, ranking among the highest in this class of material. Importantly, numerous diffuse Ag-S bonds combined with amorphous phase introdeuced by vacancy engineering ensure that (AgCu)0.998Te0.8Se0.1S0.1 retains high plasticity while having high performance. A novel flexible thermoelectric device, comprising ductile p-type (AgCu)0.998Te0.8Se0.1S0.1 and n-type commercial Bi2Te3, achieves an impressive power density of ~126 μW cm−2 under 25 K temperature difference, demonstrating significant application prospects for wearable electronics.
Suggested Citation
Nan-Hai Li & Xiao-Lei Shi & Si-Qi Liu & Meng Li & Tian-Yi Cao & Min Zhang & Wan-Yu Lyu & Wei-Di Liu & Dong-Chen Qi & Zhi-Gang Chen, 2025.
"Strategic vacancy engineering advances record-high ductile AgCu(Te, Se, S) thermoelectrics,"
Nature Communications, Nature, vol. 16(1), pages 1-11, December.
Handle:
RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-58104-x
DOI: 10.1038/s41467-025-58104-x
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