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Efficient and stable near-infrared InAs quantum dot light-emitting diodes

Author

Listed:
  • Binghan Li

    (Westlake University
    Westlake Institute for Optoelectronics)

  • Yu Wang

    (Henan University)

  • Jiancheng Zhang

    (Westlake University
    Westlake Institute for Optoelectronics)

  • Yaobo Li

    (Henan University)

  • Bo Li

    (University of Science and Technology of China)

  • Qingli Lin

    (Henan University)

  • Ruijia Sun

    (Westlake University)

  • Fengjia Fan

    (University of Science and Technology of China)

  • Zaiping Zeng

    (Henan University)

  • Huaibin Shen

    (Henan University)

  • Botao Ji

    (Westlake University
    Westlake Institute for Optoelectronics)

Abstract

Visible quantum dot light-emitting diodes have satisfied commercial display requirements. However, near-infrared counterparts considerably lag behind due to the inferior quality of near-infrared quantum dots and limitations in device architecture suitable for near-infrared electroluminescence. Here, we present an efficient strategy using zinc fluoride to balance ZnSe shell growth across different core quantum dot facets, producing highly regular InAs/InP/ZnSe/ZnS quantum dots with near-unity quantum yield. Moreover, we develop a method of in-situ photo-crosslinking blended hole-transport materials for accurate energy level modulation. The crosslinked hole-transport layers enhance hole transfer to the emitting layer for balanced carrier dynamics in quantum dot light-emitting diodes. The resulting near-infrared quantum dot light-emitting diodes exhibit a peak external quantum efficiency of 20.5%, a maximum radiance of 581.4 W sr−1 m−2 and an operational half-lifetime of 550 h at 50 W sr−1 m−2. This study represents a step towards practical application of near-infrared quantum dot light-emitting diodes.

Suggested Citation

  • Binghan Li & Yu Wang & Jiancheng Zhang & Yaobo Li & Bo Li & Qingli Lin & Ruijia Sun & Fengjia Fan & Zaiping Zeng & Huaibin Shen & Botao Ji, 2025. "Efficient and stable near-infrared InAs quantum dot light-emitting diodes," Nature Communications, Nature, vol. 16(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-57746-1
    DOI: 10.1038/s41467-025-57746-1
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