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Author Correction: On the longevity and inherent hermeticity of silicon-ICs: evaluation of bare-die and PDMS-coated ICs after accelerated aging and implantation studies

Author

Listed:
  • Kambiz Nanbakhsh

    (Delft University of Technology)

  • Ahmad Shah Idil

    (University College London
    Imperial College London
    Care Research and Technology Centre
    Mint Neurotechnologies Ltd)

  • Callum Lamont

    (University College London)

  • Csaba Dücső

    (HUN-REN)

  • Ömer Can Akgun

    (Delft University of Technology
    Nikhef - Dutch National Institute for Subatomic Physics)

  • Domonkos Horváth

    (HUN-REN
    Faculty of Information Technology and Bionics)

  • Kinga Tóth

    (HUN-REN
    Faculty of Information Technology and Bionics)

  • Domokos Meszéna

    (HUN-REN
    Faculty of Information Technology and Bionics)

  • István Ulbert

    (HUN-REN
    Faculty of Information Technology and Bionics)

  • Federico Mazza

    (Imperial College London)

  • Timothy G. Constandinou

    (Imperial College London
    Care Research and Technology Centre
    Mint Neurotechnologies Ltd)

  • Wouter Serdijn

    (Delft University of Technology
    Erasmus Medical Center)

  • Anne Vanhoestenberghe

    (University College London
    King’s College London)

  • Nick Donaldson

    (University College London)

  • Vasiliki Giagka

    (Delft University of Technology
    Fraunhofer Institute for Reliability and Microintegration IZM)

Abstract

No abstract is available for this item.

Suggested Citation

  • Kambiz Nanbakhsh & Ahmad Shah Idil & Callum Lamont & Csaba Dücső & Ömer Can Akgun & Domonkos Horváth & Kinga Tóth & Domokos Meszéna & István Ulbert & Federico Mazza & Timothy G. Constandinou & Wouter , 2025. "Author Correction: On the longevity and inherent hermeticity of silicon-ICs: evaluation of bare-die and PDMS-coated ICs after accelerated aging and implantation studies," Nature Communications, Nature, vol. 16(1), pages 1-1, December.
  • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-57175-0
    DOI: 10.1038/s41467-025-57175-0
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