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Ultralow trap density FAPbBr3 perovskite films for efficient light-emitting diodes and amplified spontaneous emission

Author

Listed:
  • Desui Chen

    (City University of Hong Kong, Kowloon
    City University of Hong Kong, Kowloon)

  • Aleksandr A. Sergeev

    (The Hong Kong University of Science and Technology, Kowloon)

  • Nan Zhang

    (City University of Hong Kong, Kowloon)

  • Lingyi Ke

    (City University of Hong Kong, Kowloon)

  • Ye Wu

    (City University of Hong Kong, Kowloon
    City University of Hong Kong, Kowloon)

  • Bing Tang

    (City University of Hong Kong, Kowloon
    City University of Hong Kong, Kowloon)

  • Chun Ki Tao

    (The Hong Kong University of Science and Technology, Kowloon)

  • Haochen Liu

    (City University of Hong Kong, Kowloon
    City University of Hong Kong, Kowloon)

  • Guangruixing Zou

    (City University of Hong Kong, Kowloon
    City University of Hong Kong, Kowloon)

  • Zhaohua Zhu

    (City University of Hong Kong, Kowloon
    City University of Hong Kong, Kowloon)

  • Yidan An

    (City University of Hong Kong, Kowloon)

  • Yun Li

    (City University of Hong Kong, Kowloon
    City University of Hong Kong, Kowloon)

  • Arsenii Portniagin

    (City University of Hong Kong, Kowloon
    City University of Hong Kong, Kowloon)

  • Kseniia A. Sergeeva

    (City University of Hong Kong, Kowloon
    City University of Hong Kong, Kowloon)

  • Kam Sing Wong

    (The Hong Kong University of Science and Technology, Kowloon)

  • Hin-Lap Yip

    (City University of Hong Kong, Kowloon
    City University of Hong Kong, Kowloon
    City University of Hong Kong, Kowloon
    City University of Hong Kong, Kowloon)

  • Andrey L. Rogach

    (City University of Hong Kong, Kowloon
    City University of Hong Kong, Kowloon)

Abstract

Solution-processed metal halide perovskites are widely studied for their potential in high-efficiency light-emitting diodes, yet they are facing several challenges like insufficient brightness, short operational lifetimes, and reduced power conversion efficiency under practical operation conditions. Here, we develop an interfacial amidation reaction on sacrificial ZnO substrates to produce perovskite films with low trap density (1.2 × 1010 cm−3), and implement a device structure featuring a mono-molecular hole-injection layer and an all-inorganic bi-layered electron-injection layer. This design leads to green perovskite light-emitting diodes with a brightness of ~ 312,000 cd m−2, a half-lifetime of 350 h at 1000 cd m−2, and a power conversion efficiency of 15.6% at a current density of 300 mA cm−2. Furthermore, the perovskite films show a low amplified spontaneous emission threshold of 13 μJ cm−2. Thus, our approach significantly advances the performance of green perovskite light-emitting diodes and opens up an avenue toward perovskite-based electrically pumped lasers.

Suggested Citation

  • Desui Chen & Aleksandr A. Sergeev & Nan Zhang & Lingyi Ke & Ye Wu & Bing Tang & Chun Ki Tao & Haochen Liu & Guangruixing Zou & Zhaohua Zhu & Yidan An & Yun Li & Arsenii Portniagin & Kseniia A. Sergeev, 2025. "Ultralow trap density FAPbBr3 perovskite films for efficient light-emitting diodes and amplified spontaneous emission," Nature Communications, Nature, vol. 16(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-56557-8
    DOI: 10.1038/s41467-025-56557-8
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