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Step-necking growth of silicon nanowire channels for high performance field effect transistors

Author

Listed:
  • Lei Wu

    (Nanjing University)

  • Zhiyan Hu

    (Nanjing University)

  • Lei Liang

    (Nanjing University)

  • Ruijin Hu

    (Yangzhou University)

  • Junzhuan Wang

    (Nanjing University)

  • Linwei Yu

    (Nanjing University)

Abstract

Ultrathin silicon nanowires (diameter 8 × 107 and a sharper subthreshold swing of 70 mV/dec, thanks to a stronger gating effect in the middle channel and markedly improved electric contacts at the thicker source/drain ends. These findings mark the pioneering experimental demonstration of catalytic growth acting as a deterministic fabrication method for precisely crafting engineered FET channels, ideally fitting the requirements of high-performance large-area displays and sensors.

Suggested Citation

  • Lei Wu & Zhiyan Hu & Lei Liang & Ruijin Hu & Junzhuan Wang & Linwei Yu, 2025. "Step-necking growth of silicon nanowire channels for high performance field effect transistors," Nature Communications, Nature, vol. 16(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-56376-x
    DOI: 10.1038/s41467-025-56376-x
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