Author
Listed:
- Dipanjan Sen
(Penn State University)
- Harikrishnan Ravichandran
(Penn State University)
- Mayukh Das
(Penn State University)
- Pranavram Venkatram
(Penn State University)
- Sooho Choo
(University of Minnesota)
- Shivasheesh Varshney
(University of Minnesota)
- Zhiyu Zhang
(Penn State University)
- Yongwen Sun
(Penn State University)
- Jay Shah
(University of Minnesota)
- Shiva Subbulakshmi Radhakrishnan
(Penn State University)
- Akash Saha
(Penn State University)
- Sankalpa Hazra
(Penn State University)
- Chen Chen
(Penn State University)
- Joan M. Redwing
(Penn State University
Penn State University
Penn State University
Penn State University)
- K. Andre Mkhoyan
(University of Minnesota)
- Venkatraman Gopalan
(Penn State University)
- Yang Yang
(Penn State University
Penn State University)
- Bharat Jalan
(University of Minnesota)
- Saptarshi Das
(Penn State University
Penn State University
Penn State University
Penn State University)
Abstract
Incipient ferroelectricity bridges traditional dielectrics and true ferroelectrics, enabling advanced electronic and memory devices. Firstly, we report incipient ferroelectricity in freestanding SrTiO3 nanomembranes integrated with monolayer MoS2 to create multifunctional devices, demonstrating stable ferroelectric order at low temperatures for cryogenic memory devices. Our observation includes ultra-fast polarization switching (~10 ns), low switching voltage (
Suggested Citation
Dipanjan Sen & Harikrishnan Ravichandran & Mayukh Das & Pranavram Venkatram & Sooho Choo & Shivasheesh Varshney & Zhiyu Zhang & Yongwen Sun & Jay Shah & Shiva Subbulakshmi Radhakrishnan & Akash Saha &, 2024.
"Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures,"
Nature Communications, Nature, vol. 15(1), pages 1-12, December.
Handle:
RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-54231-z
DOI: 10.1038/s41467-024-54231-z
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