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Quantum Hall effect in a CVD-grown oxide

Author

Listed:
  • Oleksandr Zheliuk

    (Radboud University
    Radboud University)

  • Yuliia Kreminska

    (University of Groningen)

  • Qundong Fu

    (Nanyang Technological University)

  • Davide Pizzirani

    (Radboud University
    Radboud University)

  • Emily L.Q.N. Ammerlaan

    (Radboud University
    Radboud University)

  • Ying Wang

    (University of Groningen)

  • Sardar Hameed

    (University of Groningen
    University of Malakand)

  • Puhua Wan

    (University of Groningen)

  • Xiaoli Peng

    (University of Groningen)

  • Steffen Wiedmann

    (Radboud University
    Radboud University)

  • Zheng Liu

    (Nanyang Technological University)

  • Jianting Ye

    (University of Groningen)

  • Uli Zeitler

    (Radboud University
    Radboud University)

Abstract

Two-dimensional (2D) electron systems are promising for investigating correlated quantum phenomena. In particular, 2D oxides provide a platform that can host various quantum phases such as quantized Hall effect, superconductivity, or magnetism. The realization of such quantum phases in 2D oxides heavily relies on dedicated heterostructure growths. Here we show the integer quantum Hall effect achieved in chemical vapor deposition grown Bi2O2Se - a representative member of a more accessible oxide family. A single or few subband 2D electron system can be prepared in thin films of Bi2O2Se, where the film thickness acts as the key subband design parameter and the occupation is determined by the electric field effect. This oxide platform exhibits characteristic advantages in structural flexibility due to its layered nature, making it suitable for scalable growth. The unique small mass distinguishes Bi2O2Se from other high-mobility oxides, providing a new platform for exploring quantum Hall physics in 2D oxides.

Suggested Citation

  • Oleksandr Zheliuk & Yuliia Kreminska & Qundong Fu & Davide Pizzirani & Emily L.Q.N. Ammerlaan & Ying Wang & Sardar Hameed & Puhua Wan & Xiaoli Peng & Steffen Wiedmann & Zheng Liu & Jianting Ye & Uli Z, 2024. "Quantum Hall effect in a CVD-grown oxide," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-54014-6
    DOI: 10.1038/s41467-024-54014-6
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    References listed on IDEAS

    as
    1. E. Maniv & M. Ben Shalom & A. Ron & M. Mograbi & A. Palevski & M. Goldstein & Y. Dagan, 2015. "Strong correlations elucidate the electronic structure and phase diagram of LaAlO3/SrTiO3 interface," Nature Communications, Nature, vol. 6(1), pages 1-7, November.
    2. Y. Matsubara & K. S. Takahashi & M. S. Bahramy & Y. Kozuka & D. Maryenko & J. Falson & A. Tsukazaki & Y. Tokura & M. Kawasaki, 2016. "Observation of the quantum Hall effect in δ-doped SrTiO3," Nature Communications, Nature, vol. 7(1), pages 1-7, September.
    3. Jialu Wang & Jing Wu & Tao Wang & Zhuokai Xu & Jifeng Wu & Wanghua Hu & Zhi Ren & Shi Liu & Kamran Behnia & Xiao Lin, 2020. "T-square resistivity without Umklapp scattering in dilute metallic Bi2O2Se," Nature Communications, Nature, vol. 11(1), pages 1-8, December.
    4. D. Maryenko & A. McCollam & J. Falson & Y. Kozuka & J. Bruin & U. Zeitler & M. Kawasaki, 2018. "Composite fermion liquid to Wigner solid transition in the lowest Landau level of zinc oxide," Nature Communications, Nature, vol. 9(1), pages 1-6, December.
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