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Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI3/hBN/WSe2 heterostructure

Author

Listed:
  • Jianchen Dang

    (University of Florida)

  • Tongyao Wu

    (University of Florida)

  • Shaohua Yan

    (Renmin University of China
    Renmin University of China)

  • Kenji Watanabe

    (National Institute for Materials Science)

  • Takashi Taniguchi

    (National Institute for Materials Science)

  • Hechang Lei

    (Renmin University of China
    Renmin University of China)

  • Xiao-Xiao Zhang

    (University of Florida)

Abstract

Spin-polarized light-emitting diodes (spin-LEDs) convert the electronic spin information to photon circular polarization, offering potential applications including spin amplification, optical communications, and advanced imaging. The conventional control of the emitted light’s circular polarization requires a change in the external magnetic field, limiting the operation conditions of spin-LEDs. Here, we demonstrate an atomically thin spin-LED device based on a heterostructure of a monolayer WSe2 and a few-layer antiferromagnetic CrI3, separated by a thin hBN tunneling barrier. The CrI3 and hBN layers polarize the spin of the injected carriers into the WSe2. With the valley optical selection rule in the monolayer WSe2, the electroluminescence exhibits a high degree of circular polarization that follows the CrI3 magnetic states. Importantly, we show an efficient electrical tuning, including a sign reversal, of the electroluminescent circular polarization by applying an electrostatic field due to the electrical tunability of the few-layer CrI3 magnetization. Our results establish a platform to achieve on-demand operation of nanoscale spin-LED and electrical control of helicity for device applications.

Suggested Citation

  • Jianchen Dang & Tongyao Wu & Shaohua Yan & Kenji Watanabe & Takashi Taniguchi & Hechang Lei & Xiao-Xiao Zhang, 2024. "Electrical switching of spin-polarized light-emitting diodes based on a 2D CrI3/hBN/WSe2 heterostructure," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-51287-9
    DOI: 10.1038/s41467-024-51287-9
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    1. Y. Ohno & D. K. Young & B. Beschoten & F. Matsukura & H. Ohno & D. D. Awschalom, 1999. "Electrical spin injection in a ferromagnetic semiconductor heterostructure," Nature, Nature, vol. 402(6763), pages 790-792, December.
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