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Defect scattering can lead to enhanced phonon transport at nanoscale

Author

Listed:
  • Yue Hu

    (Shanghai Jiao Tong University
    China Three Gorges Corporation)

  • Jiaxuan Xu

    (Shanghai Jiao Tong University
    Shanghai Jiao Tong University)

  • Xiulin Ruan

    (Purdue University)

  • Hua Bao

    (Shanghai Jiao Tong University
    Shanghai Jiao Tong University)

Abstract

Defect scattering is well known to suppress thermal transport. In this study, however, we perform both molecular dynamics and Boltzmann transport equation calculations, to demonstrate that introducing defect scattering in nanoscale heating zone could surprisingly enhance thermal conductance of the system by up to 75%. We further reveal that the heating zone without defects yields directional nonequilibrium with overpopulated oblique-propagating phonons which suppress thermal transport, while introducing defects redirect phonons randomly to restore directional equilibrium, thereby enhancing thermal conductance. We demonstrate that defect scattering can enable such thermal transport enhancement in a wide range of temperatures, materials, and sizes, and offer an unconventional strategy for enhancing thermal transport via the manipulation of phonon directional nonequilibrium.

Suggested Citation

  • Yue Hu & Jiaxuan Xu & Xiulin Ruan & Hua Bao, 2024. "Defect scattering can lead to enhanced phonon transport at nanoscale," Nature Communications, Nature, vol. 15(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-47716-4
    DOI: 10.1038/s41467-024-47716-4
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    References listed on IDEAS

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    1. Chenhan Liu & Chao Wu & Xian Yi Tan & Yi Tao & Yin Zhang & Deyu Li & Juekuan Yang & Qingyu Yan & Yunfei Chen, 2023. "Unexpected doping effects on phonon transport in quasi-one-dimensional van der Waals crystal TiS3 nanoribbons," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    2. Zhong Yan & Guanxiong Liu & Javed M. Khan & Alexander A. Balandin, 2012. "Graphene quilts for thermal management of high-power GaN transistors," Nature Communications, Nature, vol. 3(1), pages 1-8, January.
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