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3.5 × 3.5 μm2 GaN blue micro-light-emitting diodes with negligible sidewall surface nonradiative recombination

Author

Listed:
  • Xuelun Wang

    (GaN Advanced Device Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), Furo-cho
    National Institute of Advanced Industrial Science and Technology (AIST)
    Nagoya University, Furo-cho)

  • Xixi Zhao

    (National Institute of Advanced Industrial Science and Technology (AIST))

  • Tokio Takahashi

    (National Institute of Advanced Industrial Science and Technology (AIST))

  • Daisuke Ohori

    (Tohoku University)

  • Seiji Samukawa

    (Tohoku University
    National Yang Ming Chiao Tung University)

Abstract

Micro-light-emitting diode displays are generating considerable interest as a promising technology for augmented-reality glasses. However, the fabrication of highly efficient and ultra-small (

Suggested Citation

  • Xuelun Wang & Xixi Zhao & Tokio Takahashi & Daisuke Ohori & Seiji Samukawa, 2023. "3.5 × 3.5 μm2 GaN blue micro-light-emitting diodes with negligible sidewall surface nonradiative recombination," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-43472-z
    DOI: 10.1038/s41467-023-43472-z
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