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Publisher Correction: Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control

Author

Listed:
  • Chi Thang Nguyen

    (Incheon National University)

  • Eun-Hyoung Cho

    (Samsung Advanced Institute of Technology)

  • Bonwook Gu

    (Incheon National University)

  • Sunghee Lee

    (Samsung Advanced Institute of Technology)

  • Hae-Sung Kim

    (Samsung Advanced Institute of Technology)

  • Jeongwoo Park

    (Hongik University)

  • Neung-Kyung Yu

    (Hongik University)

  • Sangwoo Shin

    (University at Buffalo)

  • Bonggeun Shong

    (Hongik University)

  • Jeong Yub Lee

    (Samsung Advanced Institute of Technology)

  • Han-Bo-Ram Lee

    (Incheon National University)

Abstract

No abstract is available for this item.

Suggested Citation

  • Chi Thang Nguyen & Eun-Hyoung Cho & Bonwook Gu & Sunghee Lee & Hae-Sung Kim & Jeongwoo Park & Neung-Kyung Yu & Sangwoo Shin & Bonggeun Shong & Jeong Yub Lee & Han-Bo-Ram Lee, 2023. "Publisher Correction: Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control," Nature Communications, Nature, vol. 14(1), pages 1-1, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-35883-9
    DOI: 10.1038/s41467-023-35883-9
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