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A steep switching WSe2 impact ionization field-effect transistor

Author

Listed:
  • Haeju Choi

    (Sungkyunkwan University)

  • Jinshu Li

    (Sungkyunkwan University)

  • Taeho Kang

    (Sungkyunkwan University)

  • Chanwoo Kang

    (Sungkyunkwan University)

  • Hyeonje Son

    (Sungkyunkwan University)

  • Jongwook Jeon

    (Konkuk University)

  • Euyheon Hwang

    (Sungkyunkwan University
    Sungkyunkwan University)

  • Sungjoo Lee

    (Sungkyunkwan University
    Sungkyunkwan University)

Abstract

The Fermi-Dirac distribution of carriers and the drift-diffusion mode of transport represent two fundamental barriers towards the reduction of the subthreshold slope (SS) and the optimization of the energy consumption of field-effect transistors. In this study, we report the realization of steep-slope impact ionization field-effect transistors (I2FETs) based on a gate-controlled homogeneous WSe2 lateral junction. The devices showed average SS down to 2.73 mV/dec over three decades of source-drain current and an on/off ratio of ~106 at room temperature and low bias voltages (

Suggested Citation

  • Haeju Choi & Jinshu Li & Taeho Kang & Chanwoo Kang & Hyeonje Son & Jongwook Jeon & Euyheon Hwang & Sungjoo Lee, 2022. "A steep switching WSe2 impact ionization field-effect transistor," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-33770-3
    DOI: 10.1038/s41467-022-33770-3
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