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Inelastic phonon transport across atomically sharp metal/semiconductor interfaces

Author

Listed:
  • Qinshu Li

    (Tsinghua University)

  • Fang Liu

    (Peking University
    Collaborative Innovation Center of Quantum Matter)

  • Song Hu

    (Shanghai Jiao Tong University)

  • Houfu Song

    (Tsinghua University)

  • Susu Yang

    (Peking University)

  • Hailing Jiang

    (Peking University)

  • Tao Wang

    (Peking University)

  • Yee Kan Koh

    (National University of Singapore)

  • Changying Zhao

    (Shanghai Jiao Tong University)

  • Feiyu Kang

    (Tsinghua University
    Tsinghua Shenzhen International Graduate School and Guangdong Provincial Key Laboratory of Thermal Management Engineering & Materials)

  • Junqiao Wu

    (University of California
    Lawrence Berkeley National Laboratory)

  • Xiaokun Gu

    (Shanghai Jiao Tong University)

  • Bo Sun

    (Tsinghua University
    Tsinghua Shenzhen International Graduate School and Guangdong Provincial Key Laboratory of Thermal Management Engineering & Materials)

  • Xinqiang Wang

    (Peking University
    Collaborative Innovation Center of Quantum Matter)

Abstract

Understanding thermal transport across metal/semiconductor interfaces is crucial for the heat dissipation of electronics. The dominant heat carriers in non-metals, phonons, are thought to transport elastically across most interfaces, except for a few extreme cases where the two materials that formed the interface are highly dissimilar with a large difference in Debye temperature. In this work, we show that even for two materials with similar Debye temperatures (Al/Si, Al/GaN), a substantial portion of phonons will transport inelastically across their interfaces at high temperatures, significantly enhancing interface thermal conductance. Moreover, we find that interface sharpness strongly affects phonon transport process. For atomically sharp interfaces, phonons are allowed to transport inelastically and interface thermal conductance linearly increases at high temperatures. With a diffuse interface, inelastic phonon transport diminishes. Our results provide new insights on phonon transport across interfaces and open up opportunities for engineering interface thermal conductance specifically for materials of relevance to microelectronics.

Suggested Citation

  • Qinshu Li & Fang Liu & Song Hu & Houfu Song & Susu Yang & Hailing Jiang & Tao Wang & Yee Kan Koh & Changying Zhao & Feiyu Kang & Junqiao Wu & Xiaokun Gu & Bo Sun & Xinqiang Wang, 2022. "Inelastic phonon transport across atomically sharp metal/semiconductor interfaces," Nature Communications, Nature, vol. 13(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-32600-w
    DOI: 10.1038/s41467-022-32600-w
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    References listed on IDEAS

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    1. J.-S. Wang & J. Wang & J. T. Lü, 2008. "Quantum thermal transport in nanostructures," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 62(4), pages 381-404, April.
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    Cited by:

    1. Guang Wang & Hongzhao Fan & Jiawang Li & Zhigang Li & Yanguang Zhou, 2024. "Direct observation of tunable thermal conductance at solid/porous crystalline solid interfaces induced by water adsorbates," Nature Communications, Nature, vol. 15(1), pages 1-8, December.

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