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Electronic gap characterization at mesoscopic scale via scanning probe microscopy under ambient conditions

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  • Dian Li

    (University of Hong Kong, Pokfulam Road
    Shantou University)

  • Xiong Wang

    (University of Hong Kong, Pokfulam Road)

  • Xiaoyong Mo

    (University of Hong Kong)

  • Edmund C. M. Tse

    (University of Hong Kong)

  • Xiaodong Cui

    (University of Hong Kong, Pokfulam Road)

Abstract

Electronic gaps play an important role in the electric and optical properties of materials. Although various experimental techniques, such as scanning tunnelling spectroscopy and optical or photoemission spectroscopy, are normally used to perform electronic band structure characterizations, it is still challenging to measure the electronic gap at the nanoscale under ambient conditions. Here we report a scanning probe microscopic technique to characterize the electronic gap with nanometre resolution at room temperature and ambient pressure. The technique probes the electronic gap by monitoring the changes of the local quantum capacitance via the Coulomb force at a mesoscopic scale. We showcase this technique by characterizing several 2D semiconductors and van der Waals heterostructures under ambient conditions.

Suggested Citation

  • Dian Li & Xiong Wang & Xiaoyong Mo & Edmund C. M. Tse & Xiaodong Cui, 2022. "Electronic gap characterization at mesoscopic scale via scanning probe microscopy under ambient conditions," Nature Communications, Nature, vol. 13(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-32439-1
    DOI: 10.1038/s41467-022-32439-1
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