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MXene based saturation organic vertical photoelectric transistors with low subthreshold swing

Author

Listed:
  • Enlong Li

    (Fuzhou University
    Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China)

  • Changsong Gao

    (Fuzhou University
    Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China)

  • Rengjian Yu

    (Fuzhou University
    Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China)

  • Xiumei Wang

    (Fuzhou University
    Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China)

  • Lihua He

    (Fuzhou University
    Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China)

  • Yuanyuan Hu

    (Hunan University)

  • Huajie Chen

    (Xiangtan University)

  • Huipeng Chen

    (Fuzhou University
    Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China)

  • Tailiang Guo

    (Fuzhou University
    Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China)

Abstract

Vertical transistors have attracted enormous attention in the next-generation electronic devices due to their high working frequency, low operation voltage and large current density, while a major scientific and technological challenge for high performance vertical transistor is to find suitable source electrode. Herein, an MXene material, Ti3C2Tx, is introduced as source electrode of organic vertical transistors. The porous MXene films take the advantage of both partially shielding effect of graphene and the direct modulation of the Schottky barrier at the mesh electrode, which significantly enhances the ability of gate modulation and reduces the subthreshold swing to 73 mV/dec. More importantly, the saturation of output current which is essential for all transistor-based applications but remains a great challenge for vertical transistors, is easily achieved in our device due to the ultra-thin thickness and native oxidation of MXene, as verified by finite-element simulations. Finally, our device also possesses great potential for being used as wide-spectrum photodetector with fast response speed without complex material and structure design. This work demonstrates that MXene as source electrode offers plenty of opportunities for high performance vertical transistors and photoelectric devices.

Suggested Citation

  • Enlong Li & Changsong Gao & Rengjian Yu & Xiumei Wang & Lihua He & Yuanyuan Hu & Huajie Chen & Huipeng Chen & Tailiang Guo, 2022. "MXene based saturation organic vertical photoelectric transistors with low subthreshold swing," Nature Communications, Nature, vol. 13(1), pages 1-10, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-30527-w
    DOI: 10.1038/s41467-022-30527-w
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    References listed on IDEAS

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    1. Yanjun Shi & Lang Jiang & Jie Liu & Zeyi Tu & Yuanyuan Hu & Qinghe Wu & Yuanping Yi & Eliot Gann & Christopher R. McNeill & Hongxiang Li & Wenping Hu & Daoben Zhu & Henning Sirringhaus, 2018. "Bottom-up growth of n-type monolayer molecular crystals on polymeric substrate for optoelectronic device applications," Nature Communications, Nature, vol. 9(1), pages 1-8, December.
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    Cited by:

    1. Changsong Gao & Di Liu & Chenhui Xu & Weidong Xie & Xianghong Zhang & Junhua Bai & Zhixian Lin & Cheng Zhang & Yuanyuan Hu & Tailiang Guo & Huipeng Chen, 2024. "Toward grouped-reservoir computing: organic neuromorphic vertical transistor with distributed reservoir states for efficient recognition and prediction," Nature Communications, Nature, vol. 15(1), pages 1-13, December.
    2. Liuting Shan & Qizhen Chen & Rengjian Yu & Changsong Gao & Lujian Liu & Tailiang Guo & Huipeng Chen, 2023. "A sensory memory processing system with multi-wavelength synaptic-polychromatic light emission for multi-modal information recognition," Nature Communications, Nature, vol. 14(1), pages 1-11, December.
    3. Yaqian Liu & Di Liu & Changsong Gao & Xianghong Zhang & Rengjian Yu & Xiumei Wang & Enlong Li & Yuanyuan Hu & Tailiang Guo & Huipeng Chen, 2022. "Self-powered high-sensitivity all-in-one vertical tribo-transistor device for multi-sensing-memory-computing," Nature Communications, Nature, vol. 13(1), pages 1-11, December.
    4. Tae Yun Ko & Heqing Ye & G. Murali & Seul-Yi Lee & Young Ho Park & Jihoon Lee & Juyun Lee & Dong-Jin Yun & Yury Gogotsi & Seon Joon Kim & Se Hyun Kim & Yong Jin Jeong & Soo-Jin Park & Insik In, 2024. "Functionalized MXene ink enables environmentally stable printed electronics," Nature Communications, Nature, vol. 15(1), pages 1-12, December.

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