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On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour

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  • Tianming Li

    (Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology
    Material Systems for Nanoelectronics, Chemnitz University of Technology
    Institute for Integrative Nanosciences, Leibniz IFW Dresden)

  • Martin Hantusch

    (Institute for Solid State Research, Leibniz IFW Dresden)

  • Jiang Qu

    (Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology
    Material Systems for Nanoelectronics, Chemnitz University of Technology
    Institute for Integrative Nanosciences, Leibniz IFW Dresden)

  • Vineeth Kumar Bandari

    (Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology
    Material Systems for Nanoelectronics, Chemnitz University of Technology
    Institute for Integrative Nanosciences, Leibniz IFW Dresden)

  • Martin Knupfer

    (Institute for Solid State Research, Leibniz IFW Dresden)

  • Feng Zhu

    (Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology
    Material Systems for Nanoelectronics, Chemnitz University of Technology
    Institute for Integrative Nanosciences, Leibniz IFW Dresden
    Changchun Institute of Applied Chemistry, Chinese Academy of Sciences)

  • Oliver G. Schmidt

    (Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology
    Material Systems for Nanoelectronics, Chemnitz University of Technology
    Institute for Integrative Nanosciences, Leibniz IFW Dresden
    Dresden University of Technology)

Abstract

Molecular devices constructed by sub-10 nm thick molecular layers are promising candidates for a new generation of integratable nanoelectronic applications. Here, we report integrated molecular devices based on ultrathin copper phthalocyanine/fullerene hybrid layers with microtubular soft-contacts, which exhibit process-programmable functionality switching between photomultiplication and memristive behaviour. The local electric field at the interface between the polymer bottom electrode and the enclosed molecular channels modulates the ionic-electronic charge interaction and hence determines the transition of the device function. When ions are not driven into the molecular channels at a low interface electric field, photogenerated holes are trapped as electronic space charges, resulting in photomultiplication with a high external quantum efficiency. Once mobile ions are polarized and accumulated as ionic space charges in the molecular channels at a high interface electric field, the molecular devices show ferroelectric-like memristive switching with remarkable resistive ON/OFF and rectification ratios.

Suggested Citation

  • Tianming Li & Martin Hantusch & Jiang Qu & Vineeth Kumar Bandari & Martin Knupfer & Feng Zhu & Oliver G. Schmidt, 2022. "On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour," Nature Communications, Nature, vol. 13(1), pages 1-10, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-30498-y
    DOI: 10.1038/s41467-022-30498-y
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