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Giant tunable spin Hall angle in sputtered Bi2Se3 controlled by an electric field

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Listed:
  • Qi Lu

    (Xi’an Jiaotong University)

  • Ping Li

    (Xi’an Jiaotong University)

  • Zhixin Guo

    (Xi’an Jiaotong University)

  • Guohua Dong

    (Xi’an Jiaotong University)

  • Bin Peng

    (Xi’an Jiaotong University)

  • Xi Zha

    (Xi’an Jiaotong University)

  • Tai Min

    (Xi’an Jiaotong University)

  • Ziyao Zhou

    (Xi’an Jiaotong University)

  • Ming Liu

    (Xi’an Jiaotong University)

Abstract

Finding an effective way to greatly tune spin Hall angle in a low power manner is of fundamental importance for tunable and energy-efficient spintronic devices. Recently, topological insulator of Bi2Se3, having a large intrinsic spin Hall angle, show great capability to generate strong current-induced spin-orbit torques. Here we demonstrate that the spin Hall angle in Bi2Se3 can be effectively tuned asymmetrically and even enhanced about 600% reversibly by applying a bipolar electric field across the piezoelectric substrate. We reveal that the enhancement of spin Hall angle originates from both the charge doping and piezoelectric strain effet on the spin Berry curvature near Fermi level in Bi2Se3. Our findings provide a platform for achieving low power consumption and tunable spintronic devices.

Suggested Citation

  • Qi Lu & Ping Li & Zhixin Guo & Guohua Dong & Bin Peng & Xi Zha & Tai Min & Ziyao Zhou & Ming Liu, 2022. "Giant tunable spin Hall angle in sputtered Bi2Se3 controlled by an electric field," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-29281-w
    DOI: 10.1038/s41467-022-29281-w
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