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Diffusion interface layer controlling the acceptor phase of bilayer near-infrared polymer phototransistors with ultrahigh photosensitivity

Author

Listed:
  • Tao Han

    (Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University)

  • Zejiang Wang

    (Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University)

  • Ning Shen

    (Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University)

  • Zewen Zhou

    (Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University)

  • Xuehua Hou

    (Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology)

  • Shufang Ding

    (Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University)

  • Chunzhi Jiang

    (Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University)

  • Xiaoyi Huang

    (Hunan Provincial Key Laboratory of Xiangnan Rare-Precious Metals Compounds Research and Application, School of Physics and Electronic Electrical Engineering, Xiangnan University)

  • Xiaofeng Zhang

    (National Engineering Laboratory for Modern Materials Surface Engineering Technology & The Key Lab of Guangdong for Modern Surface Engineering Technology, Guangdong Institute of New Materials, Guangdong Academy of Sciences)

  • Linlin Liu

    (Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology)

Abstract

The narrow bandgap of near-infrared (NIR) polymers is a major barrier to improving the performance of NIR phototransistors. The existing technique for overcoming this barrier is to construct a bilayer device (channel layer/bulk heterojunction (BHJ) layer). However, acceptor phases of the BHJ dissolve into the channel layer and are randomly distributed by the spin-coating method, resulting in turn-on voltages (Vo) and off-state dark currents remaining at a high level. In this work, a diffusion interface layer is formed between the channel layer and BHJ layer after treating the film transfer method (FTM)-based NIR phototransistors with solvent vapor annealing (SVA). The newly formed diffusion interface layer makes it possible to control the acceptor phase distribution. The performance of the FTM-based device improves after SVA. Vo decreases from 26 V to zero, and the dark currents decrease by one order of magnitude. The photosensitivity (Iph/Idark) increases from 22 to 1.7 × 107.

Suggested Citation

  • Tao Han & Zejiang Wang & Ning Shen & Zewen Zhou & Xuehua Hou & Shufang Ding & Chunzhi Jiang & Xiaoyi Huang & Xiaofeng Zhang & Linlin Liu, 2022. "Diffusion interface layer controlling the acceptor phase of bilayer near-infrared polymer phototransistors with ultrahigh photosensitivity," Nature Communications, Nature, vol. 13(1), pages 1-11, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-28922-4
    DOI: 10.1038/s41467-022-28922-4
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