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Defect-driven antiferromagnetic domain walls in CuMnAs films

Author

Listed:
  • Sonka Reimers

    (University of Nottingham
    Diamond Light Source)

  • Dominik Kriegner

    (Technische Universität Dresden
    Czech Academy of Sciences)

  • Olena Gomonay

    (Johannes Gutenberg Universität Mainz)

  • Dina Carbone

    (Lund University)

  • Filip Krizek

    (Czech Academy of Sciences)

  • Vit Novák

    (Czech Academy of Sciences)

  • Richard P. Campion

    (University of Nottingham)

  • Francesco Maccherozzi

    (Diamond Light Source)

  • Alexander Björling

    (Lund University)

  • Oliver J. Amin

    (University of Nottingham)

  • Luke X. Barton

    (University of Nottingham)

  • Stuart F. Poole

    (University of Nottingham)

  • Khalid A. Omari

    (University of Nottingham)

  • Jan Michalička

    (Brno University of Technology)

  • Ondřej Man

    (Brno University of Technology)

  • Jairo Sinova

    (Johannes Gutenberg Universität Mainz)

  • Tomáš Jungwirth

    (University of Nottingham
    Czech Academy of Sciences)

  • Peter Wadley

    (University of Nottingham)

  • Sarnjeet S. Dhesi

    (Diamond Light Source)

  • Kevin W. Edmonds

    (University of Nottingham)

Abstract

Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects. We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180∘ and 90∘ domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance.

Suggested Citation

  • Sonka Reimers & Dominik Kriegner & Olena Gomonay & Dina Carbone & Filip Krizek & Vit Novák & Richard P. Campion & Francesco Maccherozzi & Alexander Björling & Oliver J. Amin & Luke X. Barton & Stuart , 2022. "Defect-driven antiferromagnetic domain walls in CuMnAs films," Nature Communications, Nature, vol. 13(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-28311-x
    DOI: 10.1038/s41467-022-28311-x
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    References listed on IDEAS

    as
    1. P. Wadley & V. Novák & R.P. Campion & C. Rinaldi & X. Martí & H. Reichlová & J. Železný & J. Gazquez & M.A. Roldan & M. Varela & D. Khalyavin & S. Langridge & D. Kriegner & F. Máca & J. Mašek & R. Ber, 2013. "Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs," Nature Communications, Nature, vol. 4(1), pages 1-6, October.
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