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A new opportunity for the emerging tellurium semiconductor: making resistive switching devices

Author

Listed:
  • Yifei Yang

    (Tsinghua University)

  • Mingkun Xu

    (Tsinghua University)

  • Shujing Jia

    (Fudan University
    Chinese Academy of Sciences)

  • Bolun Wang

    (Tsinghua University)

  • Lujie Xu

    (Beijing Information Science & Technology University)

  • Xinxin Wang

    (Tsinghua University)

  • Huan Liu

    (Tsinghua University)

  • Yuanshuang Liu

    (Tsinghua University)

  • Yuzheng Guo

    (Swansea University)

  • Lidan Wang

    (Southwest University)

  • Shukai Duan

    (Southwest University)

  • Kai Liu

    (Tsinghua University)

  • Min Zhu

    (Chinese Academy of Sciences)

  • Jing Pei

    (Tsinghua University)

  • Wenrui Duan

    (Beijing Information Science & Technology University)

  • Dameng Liu

    (Tsinghua University)

  • Huanglong Li

    (Tsinghua University
    Chinese Institute for Brain Research)

Abstract

The development of the resistive switching cross-point array as the next-generation platform for high-density storage, in-memory computing and neuromorphic computing heavily relies on the improvement of the two component devices, volatile selector and nonvolatile memory, which have distinct operating current requirements. The perennial current-volatility dilemma that has been widely faced in various device implementations remains a major bottleneck. Here, we show that the device based on electrochemically active, low-thermal conductivity and low-melting temperature semiconducting tellurium filament can solve this dilemma, being able to function as either selector or memory in respective desired current ranges. Furthermore, we demonstrate one-selector-one-resistor behavior in a tandem of two identical Te-based devices, indicating the potential of Te-based device as a universal array building block. These nonconventional phenomena can be understood from a combination of unique electrical-thermal properties in Te. Preliminary device optimization efforts also indicate large and unique design space for Te-based resistive switching devices.

Suggested Citation

  • Yifei Yang & Mingkun Xu & Shujing Jia & Bolun Wang & Lujie Xu & Xinxin Wang & Huan Liu & Yuanshuang Liu & Yuzheng Guo & Lidan Wang & Shukai Duan & Kai Liu & Min Zhu & Jing Pei & Wenrui Duan & Dameng L, 2021. "A new opportunity for the emerging tellurium semiconductor: making resistive switching devices," Nature Communications, Nature, vol. 12(1), pages 1-12, December.
    • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-26399-1
    DOI: 10.1038/s41467-021-26399-1
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    Cited by:

    1. Xi Zhou & Liang Zhao & Chu Yan & Weili Zhen & Yinyue Lin & Le Li & Guanlin Du & Linfeng Lu & Shan-Ting Zhang & Zhichao Lu & Dongdong Li, 2023. "Thermally stable threshold selector based on CuAg alloy for energy-efficient memory and neuromorphic computing applications," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    2. Linlin Li & Shufang Zhao & Wenhao Ran & Zhexin Li & Yongxu Yan & Bowen Zhong & Zheng Lou & Lili Wang & Guozhen Shen, 2022. "Dual sensing signal decoupling based on tellurium anisotropy for VR interaction and neuro-reflex system application," Nature Communications, Nature, vol. 13(1), pages 1-12, December.

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