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Observation of negative capacitance in antiferroelectric PbZrO3 Films

Author

Listed:
  • Leilei Qiao

    (Tsinghua University)

  • Cheng Song

    (Tsinghua University)

  • Yiming Sun

    (Tsinghua University)

  • Muhammad Umer Fayaz

    (Tsinghua University)

  • Tianqi Lu

    (Tsinghua University)

  • Siqi Yin

    (Tsinghua University)

  • Chong Chen

    (Tsinghua University)

  • Huiping Xu

    (Tsinghua University)

  • Tian-Ling Ren

    (Tsinghua University)

  • Feng Pan

    (Tsinghua University)

Abstract

Negative capacitance effect in ferroelectric materials provides a solution to the energy dissipation problem induced by Boltzmann distribution of electrons in conventional electronics. Here, we discover that besides ferroelectrics, the antiferroelectrics based on Landau switches also have intrinsic negative capacitance effect. We report both the static and transient negative capacitance effect in antiferroelectric PbZrO3 films and reveal its possible physical origin. The capacitance of the capacitor of the PbZrO3 and paraelectric heterostructure is demonstrated to be larger than that of the isolated paraelectric capacitor at room temperature, indicating the existence of the static negative capacitance. The opposite variation trends of the voltage and charge transients in a circuit of the PbZrO3 capacitor in series with an external resistor demonstrate the existence of transient negative capacitance effect. Strikingly, four negative capacitance effects are observed in the antiferroelectric system during one cycle scan of voltage pulses, different from the ferroelectric counterpart with two negative capacitance effects. The polarization vector mapping, electric field and free energy analysis reveal the rich local regions of negative capacitance effect with the negative dP/dE and (δ2G)⁄(δD2), producing stronger negative capacitance effect. The observation of negative capacitance effect in antiferroelectric films significantly extends the range of its potential application and reduces the power dissipation further.

Suggested Citation

  • Leilei Qiao & Cheng Song & Yiming Sun & Muhammad Umer Fayaz & Tianqi Lu & Siqi Yin & Chong Chen & Huiping Xu & Tian-Ling Ren & Feng Pan, 2021. "Observation of negative capacitance in antiferroelectric PbZrO3 Films," Nature Communications, Nature, vol. 12(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-24530-w
    DOI: 10.1038/s41467-021-24530-w
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    Cited by:

    1. Ziyi Yu & Ningbo Fan & Zhengqian Fu & Biao He & Shiguang Yan & Henghui Cai & Xuefeng Chen & Linlin Zhang & Yuanyuan Zhang & Bin Xu & Genshui Wang & Fangfang Xu, 2024. "Room-temperature stabilizing strongly competing ferrielectric and antiferroelectric phases in PbZrO3 by strain-mediated phase separation," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    2. Yunting Guo & Bin Peng & Guangming Lu & Guohua Dong & Guannan Yang & Bohan Chen & Ruibin Qiu & Haixia Liu & Butong Zhang & Yufei Yao & Yanan Zhao & Suzhi Li & Xiangdong Ding & Jun Sun & Ming Liu, 2024. "Remarkable flexibility in freestanding single-crystalline antiferroelectric PbZrO3 membranes," Nature Communications, Nature, vol. 15(1), pages 1-10, December.

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