Author
Listed:
- Le Duc Anh
(The University of Tokyo
The University of Tokyo
PRESTO, Japan Science and Technology Agency)
- Taiki Hayakawa
(The University of Tokyo)
- Yuji Nakagawa
(QPEC & Dept. of Applied Physics, The University of Tokyo)
- Hikari Shinya
(Tohoku University
Center for Spintronics Research Network (CSRN), Tohoku University
Osaka University)
- Tetsuya Fukushima
(Osaka University
The University of Tokyo
The University of Tokyo)
- Masaki Kobayashi
(The University of Tokyo
The University of Tokyo)
- Hiroshi Katayama-Yoshida
(The University of Tokyo)
- Yoshihiro Iwasa
(QPEC & Dept. of Applied Physics, The University of Tokyo
RIKEN Center for Emergent Matter Science (CEMS))
- Masaaki Tanaka
(The University of Tokyo
The University of Tokyo)
Abstract
Material structures containing tetrahedral FeAs bonds, depending on their density and geometrical distribution, can host several competing quantum ground states ranging from superconductivity to ferromagnetism. Here we examine structures of quasi two-dimensional (2D) layers of tetrahedral Fe-As bonds embedded with a regular interval in a semiconductor InAs matrix, which resembles the crystal structure of Fe-based superconductors. Contrary to the case of Fe-based pnictides, these FeAs/InAs superlattices (SLs) exhibit ferromagnetism, whose Curie temperature (TC) increases rapidly with decreasing the InAs interval thickness tInAs (TC ∝ tInAs−3), and an extremely large magnetoresistance up to 500% that is tunable by a gate voltage. Our first principles calculations reveal the important role of disordered positions of Fe atoms in the establishment of ferromagnetism in these quasi-2D FeAs-based SLs. These unique features mark the FeAs/InAs SLs as promising structures for spintronic applications.
Suggested Citation
Le Duc Anh & Taiki Hayakawa & Yuji Nakagawa & Hikari Shinya & Tetsuya Fukushima & Masaki Kobayashi & Hiroshi Katayama-Yoshida & Yoshihiro Iwasa & Masaaki Tanaka, 2021.
"Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures,"
Nature Communications, Nature, vol. 12(1), pages 1-10, December.
Handle:
RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-24190-w
DOI: 10.1038/s41467-021-24190-w
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