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Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry

Author

Listed:
  • Seongin Hong

    (Sungkyunkwan University
    The University of Texas at Austin)

  • Nicolò Zagni

    (University of Modena and Reggio Emilia)

  • Sooho Choo

    (Sungkyunkwan University)

  • Na Liu

    (Sungkyunkwan University)

  • Seungho Baek

    (Sungkyunkwan University)

  • Arindam Bala

    (Sungkyunkwan University)

  • Hocheon Yoo

    (Gachon University)

  • Byung Ha Kang

    (Yonsei University)

  • Hyun Jae Kim

    (Yonsei University)

  • Hyung Joong Yun

    (Korea Basic Science Institute (KBSI))

  • Muhammad Ashraful Alam

    (Purdue University)

  • Sunkook Kim

    (Sungkyunkwan University)

Abstract

Various large-area growth methods for two-dimensional transition metal dichalcogenides have been developed recently for future electronic and photonic applications. However, they have not yet been employed for synthesizing active pixel image sensors. Here, we report on an active pixel image sensor array with a bilayer MoS2 film prepared via a two-step large-area growth method. The active pixel of image sensor is composed of 2D MoS2 switching transistors and 2D MoS2 phototransistors. The maximum photoresponsivity (Rph) of the bilayer MoS2 phototransistors in an 8 × 8 active pixel image sensor array is statistically measured as high as 119.16 A W−1. With the aid of computational modeling, we find that the main mechanism for the high Rph of the bilayer MoS2 phototransistor is a photo-gating effect by the holes trapped at subgap states. The image-sensing characteristics of the bilayer MoS2 active pixel image sensor array are successfully investigated using light stencil projection.

Suggested Citation

  • Seongin Hong & Nicolò Zagni & Sooho Choo & Na Liu & Seungho Baek & Arindam Bala & Hocheon Yoo & Byung Ha Kang & Hyun Jae Kim & Hyung Joong Yun & Muhammad Ashraful Alam & Sunkook Kim, 2021. "Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry," Nature Communications, Nature, vol. 12(1), pages 1-11, December.
    • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-23711-x
    DOI: 10.1038/s41467-021-23711-x
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    Cited by:

    1. Xingchen Pang & Yang Wang & Yuyan Zhu & Zhenhan Zhang & Du Xiang & Xun Ge & Haoqi Wu & Yongbo Jiang & Zizheng Liu & Xiaoxian Liu & Chunsen Liu & Weida Hu & Peng Zhou, 2024. "Non-volatile rippled-assisted optoelectronic array for all-day motion detection and recognition," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    2. Pei-Yu Huang & Bi-Yi Jiang & Hong-Ji Chen & Jia-Yi Xu & Kang Wang & Cheng-Yi Zhu & Xin-Yan Hu & Dong Li & Liang Zhen & Fei-Chi Zhou & Jing-Kai Qin & Cheng-Yan Xu, 2023. "Neuro-inspired optical sensor array for high-accuracy static image recognition and dynamic trace extraction," Nature Communications, Nature, vol. 14(1), pages 1-9, December.

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