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Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions

Author

Listed:
  • Boris V. Senkovskiy

    (II. Physikalisches Institut, Universität zu Köln)

  • Alexey V. Nenashev

    (Rzhanov Institute of Semiconductor Physics
    Novosibirsk State University)

  • Seyed K. Alavi

    (Universität zu Köln
    Institut für Angewandte Physik der Universität Bonn)

  • Yannic Falke

    (II. Physikalisches Institut, Universität zu Köln)

  • Martin Hell

    (II. Physikalisches Institut, Universität zu Köln)

  • Pantelis Bampoulis

    (II. Physikalisches Institut, Universität zu Köln)

  • Dmitry V. Rybkovskiy

    (Skolkovo Institute of Science and Technology)

  • Dmitry Yu. Usachov

    (Saint Petersburg State University)

  • Alexander V. Fedorov

    (IFW Dresden
    Helmholtz-Zentrum Berlin für Materialien und Energie (HZB))

  • Alexander I. Chernov

    (II. Physikalisches Institut, Universität zu Köln
    Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology (MIPT)
    Russian Quantum Center)

  • Florian Gebhard

    (Philipps-Universität)

  • Klaus Meerholz

    (Universität zu Köln)

  • Dirk Hertel

    (Universität zu Köln)

  • Masashi Arita

    (Hiroshima University)

  • Taichi Okuda

    (Hiroshima University)

  • Koji Miyamoto

    (Hiroshima University)

  • Kenya Shimada

    (Hiroshima University)

  • Felix R. Fischer

    (University of California at Berkeley
    Lawrence Berkeley National Laboratory
    Kavli Energy NanoSciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory)

  • Thomas Michely

    (II. Physikalisches Institut, Universität zu Köln)

  • Sergei D. Baranovskii

    (Philipps-Universität)

  • Klas Lindfors

    (Universität zu Köln)

  • Thomas Szkopek

    (McGill University)

  • Alexander Grüneis

    (II. Physikalisches Institut, Universität zu Köln)

Abstract

Lateral heterojunctions of atomically precise graphene nanoribbons (GNRs) hold promise for applications in nanotechnology, yet their charge transport and most of the spectroscopic properties have not been investigated. Here, we synthesize a monolayer of multiple aligned heterojunctions consisting of quasi-metallic and wide-bandgap GNRs, and report characterization by scanning tunneling microscopy, angle-resolved photoemission, Raman spectroscopy, and charge transport. Comprehensive transport measurements as a function of bias and gate voltages, channel length, and temperature reveal that charge transport is dictated by tunneling through the potential barriers formed by wide-bandgap GNR segments. The current-voltage characteristics are in agreement with calculations of tunneling conductance through asymmetric barriers. We fabricate a GNR heterojunctions based sensor and demonstrate greatly improved sensitivity to adsorbates compared to graphene based sensors. This is achieved via modulation of the GNR heterojunction tunneling barriers by adsorbates.

Suggested Citation

  • Boris V. Senkovskiy & Alexey V. Nenashev & Seyed K. Alavi & Yannic Falke & Martin Hell & Pantelis Bampoulis & Dmitry V. Rybkovskiy & Dmitry Yu. Usachov & Alexander V. Fedorov & Alexander I. Chernov & , 2021. "Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions," Nature Communications, Nature, vol. 12(1), pages 1-11, December.
    • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-22774-0
    DOI: 10.1038/s41467-021-22774-0
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