Author
Listed:
- Libo Zhang
(Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Donghua University)
- Zhiqingzi Chen
(Shanghai Institute of Technical Physics, Chinese Academy of Sciences)
- Kaixuan Zhang
(Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Donghua University)
- Lin Wang
(Shanghai Institute of Technical Physics, Chinese Academy of Sciences)
- Huang Xu
(Shanghai Institute of Technical Physics, Chinese Academy of Sciences)
- Li Han
(Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Donghua University)
- Wanlong Guo
(Shanghai Institute of Technical Physics, Chinese Academy of Sciences
ShanghaiTech University)
- Yao Yang
(Shanghai Institute of Technical Physics, Chinese Academy of Sciences
ShanghaiTech University)
- Chia-Nung Kuo
(National Cheng Kung University)
- Chin Shan Lue
(National Cheng Kung University)
- Debashis Mondal
(Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science
International Centre for Theoretical Physics (ICTP))
- Jun Fuji
(Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science)
- Ivana Vobornik
(Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science)
- Barun Ghosh
(Indian Institute of Technology Kanpur)
- Amit Agarwal
(Indian Institute of Technology Kanpur)
- Huaizhong Xing
(Donghua University
Shanghai Institute of Intelligent Electronics and Systems)
- Xiaoshuang Chen
(Shanghai Institute of Technical Physics, Chinese Academy of Sciences
ShanghaiTech University)
- Antonio Politano
(University of L’Aquila
CNR-IMM Istituto per la Microelettronica e Microsistemi)
- Wei Lu
(Shanghai Institute of Technical Physics, Chinese Academy of Sciences
ShanghaiTech University)
Abstract
The advent of topological semimetals enables the exploitation of symmetry-protected topological phenomena and quantized transport. Here, we present homogeneous rectifiers, converting high-frequency electromagnetic energy into direct current, based on low-energy Dirac fermions of topological semimetal-NiTe2, with state-of-the-art efficiency already in the first implementation. Explicitly, these devices display room-temperature photosensitivity as high as 251 mA W−1 at 0.3 THz in an unbiased mode, with a photocurrent anisotropy ratio of 22, originating from the interplay between the spin-polarized surface and bulk states. Device performances in terms of broadband operation, high dynamic range, as well as their high sensitivity, validate the immense potential and unique advantages associated to the control of nonequilibrium gapless topological states via built-in electric field, electromagnetic polarization and symmetry breaking in topological semimetals. These findings pave the way for the exploitation of topological phase of matter for high-frequency operations in polarization-sensitive sensing, communications and imaging.
Suggested Citation
Libo Zhang & Zhiqingzi Chen & Kaixuan Zhang & Lin Wang & Huang Xu & Li Han & Wanlong Guo & Yao Yang & Chia-Nung Kuo & Chin Shan Lue & Debashis Mondal & Jun Fuji & Ivana Vobornik & Barun Ghosh & Amit A, 2021.
"High-frequency rectifiers based on type-II Dirac fermions,"
Nature Communications, Nature, vol. 12(1), pages 1-8, December.
Handle:
RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-21906-w
DOI: 10.1038/s41467-021-21906-w
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