Author
Listed:
- Hariom Jani
(National University of Singapore
National University of Singapore
National University of Singapore)
- Jiajun Linghu
(National University of Singapore
Chang’an University)
- Sonu Hooda
(National University of Singapore)
- Rajesh V. Chopdekar
(Advanced Light Source, Lawrence Berkeley National Laboratory)
- Changjian Li
(National University of Singapore
National University of Singapore)
- Ganesh Ji Omar
(National University of Singapore
National University of Singapore)
- Saurav Prakash
(National University of Singapore
National University of Singapore)
- Yonghua Du
(Institute of Chemical and Engineering Sciences
National Synchrotron Light Source II)
- Ping Yang
(National University of Singapore)
- Agnieszka Banas
(National University of Singapore)
- Krzysztof Banas
(National University of Singapore)
- Siddhartha Ghosh
(National University of Singapore
SRM University - AP)
- Sunil Ojha
(Inter-University Accelerator Centre)
- G. R. Umapathy
(Inter-University Accelerator Centre)
- Dinakar Kanjilal
(Inter-University Accelerator Centre)
- A. Ariando
(National University of Singapore
National University of Singapore
National University of Singapore)
- Stephen J. Pennycook
(National University of Singapore
National University of Singapore
National University of Singapore)
- Elke Arenholz
(Advanced Light Source, Lawrence Berkeley National Laboratory
Cornell High Energy Synchrotron Source)
- Paolo G. Radaelli
(University of Oxford)
- J. M. D. Coey
(Trinity College
CRANN, Trinity College)
- Yuan Ping Feng
(National University of Singapore
National University of Singapore)
- T. Venkatesan
(National University of Singapore
National University of Singapore
National University of Singapore
National University of Singapore)
Abstract
Antiferromagnetic insulators are a ubiquitous class of magnetic materials, holding the promise of low-dissipation spin-based computing devices that can display ultra-fast switching and are robust against stray fields. However, their imperviousness to magnetic fields also makes them difficult to control in a reversible and scalable manner. Here we demonstrate a novel proof-of-principle ionic approach to control the spin reorientation (Morin) transition reversibly in the common antiferromagnetic insulator α-Fe2O3 (haematite) – now an emerging spintronic material that hosts topological antiferromagnetic spin-textures and long magnon-diffusion lengths. We use a low-temperature catalytic-spillover process involving the post-growth incorporation or removal of hydrogen from α-Fe2O3 thin films. Hydrogenation drives pronounced changes in its magnetic anisotropy, Néel vector orientation and canted magnetism via electron injection and local distortions. We explain these effects with a detailed magnetic anisotropy model and first-principles calculations. Tailoring our work for future applications, we demonstrate reversible control of the room-temperature spin-state by doping/expelling hydrogen in Rh-substituted α-Fe2O3.
Suggested Citation
Hariom Jani & Jiajun Linghu & Sonu Hooda & Rajesh V. Chopdekar & Changjian Li & Ganesh Ji Omar & Saurav Prakash & Yonghua Du & Ping Yang & Agnieszka Banas & Krzysztof Banas & Siddhartha Ghosh & Sunil , 2021.
"Reversible hydrogen control of antiferromagnetic anisotropy in α-Fe2O3,"
Nature Communications, Nature, vol. 12(1), pages 1-10, December.
Handle:
RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-21807-y
DOI: 10.1038/s41467-021-21807-y
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