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High-fidelity single-shot readout of single electron spin in diamond with spin-to-charge conversion

Author

Listed:
  • Qi Zhang

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Yuhang Guo

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Wentao Ji

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Mengqi Wang

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Jun Yin

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Fei Kong

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Yiheng Lin

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Chunming Yin

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Fazhan Shi

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Ya Wang

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

  • Jiangfeng Du

    (University of Science and Technology of China
    University of Science and Technology of China
    University of Science and Technology of China)

Abstract

High fidelity single-shot readout of qubits is a crucial component for fault-tolerant quantum computing and scalable quantum networks. In recent years, the nitrogen-vacancy (NV) center in diamond has risen as a leading platform for the above applications. The current single-shot readout of the NV electron spin relies on resonance fluorescence method at cryogenic temperature. However, the spin-flip process interrupts the optical cycling transition, therefore, limits the readout fidelity. Here, we introduce a spin-to-charge conversion method assisted by near-infrared (NIR) light to suppress the spin-flip error. This method leverages high spin-selectivity of cryogenic resonance excitation and flexibility of photoionization. We achieve an overall fidelity > 95% for the single-shot readout of an NV center electron spin in the presence of high strain and fast spin-flip process. With further improvements, this technique has the potential to achieve spin readout fidelity exceeding the fault-tolerant threshold, and may also find applications on integrated optoelectronic devices.

Suggested Citation

  • Qi Zhang & Yuhang Guo & Wentao Ji & Mengqi Wang & Jun Yin & Fei Kong & Yiheng Lin & Chunming Yin & Fazhan Shi & Ya Wang & Jiangfeng Du, 2021. "High-fidelity single-shot readout of single electron spin in diamond with spin-to-charge conversion," Nature Communications, Nature, vol. 12(1), pages 1-6, December.
    • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-21781-5
    DOI: 10.1038/s41467-021-21781-5
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