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Author Correction: Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage

Author

Listed:
  • Jian Zhi

    (Chinese Academy of Sciences
    University of Regensburg)

  • Min Zhou

    (University of Science and Technology of China)

  • Zhen Zhang

    (South China Normal University)

  • Oliver Reiser

    (University of Regensburg)

  • Fuqiang Huang

    (Chinese Academy of Sciences
    Peking University)

Abstract

A Correction to this paper has been published: https://doi.org/10.1038/s41467-021-21705-3

Suggested Citation

  • Jian Zhi & Min Zhou & Zhen Zhang & Oliver Reiser & Fuqiang Huang, 2021. "Author Correction: Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage," Nature Communications, Nature, vol. 12(1), pages 1-2, December.
    • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-21705-3
    DOI: 10.1038/s41467-021-21705-3
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    Cited by:

    1. Tiezhu Xu & Zhenming Xu & Tengyu Yao & Miaoran Zhang & Duo Chen & Xiaogang Zhang & Laifa Shen, 2023. "Discovery of fast and stable proton storage in bulk hexagonal molybdenum oxide," Nature Communications, Nature, vol. 14(1), pages 1-13, December.

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