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An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

Author

Listed:
  • Shun-Chang Liu

    (Institute of Chemistry, Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Chen-Min Dai

    (East China Normal University)

  • Yimeng Min

    (Department of Electrical and Computer Engineering, University of Toronto)

  • Yi Hou

    (Department of Electrical and Computer Engineering, University of Toronto)

  • Andrew H. Proppe

    (Department of Electrical and Computer Engineering, University of Toronto)

  • Ying Zhou

    (Huazhong University of Science and Technology)

  • Chao Chen

    (Huazhong University of Science and Technology)

  • Shiyou Chen

    (East China Normal University)

  • Jiang Tang

    (Huazhong University of Science and Technology)

  • Ding-Jiang Xue

    (Institute of Chemistry, Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Edward H. Sargent

    (Department of Electrical and Computer Engineering, University of Toronto)

  • Jin-Song Hu

    (Institute of Chemistry, Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

Abstract

In lead–halide perovskites, antibonding states at the valence band maximum (VBM)—the result of Pb 6s-I 5p coupling—enable defect-tolerant properties; however, questions surrounding stability, and a reliance on lead, remain challenges for perovskite solar cells. Here, we report that binary GeSe has a perovskite-like antibonding VBM arising from Ge 4s-Se 4p coupling; and that it exhibits similarly shallow bulk defects combined with high stability. We find that the deep defect density in bulk GeSe is ~1012 cm−3. We devise therefore a surface passivation strategy, and find that the resulting GeSe solar cells achieve a certified power conversion efficiency of 5.2%, 3.7 times higher than the best previously-reported GeSe photovoltaics. Unencapsulated devices show no efficiency loss after 12 months of storage in ambient conditions; 1100 hours under maximum power point tracking; a total ultraviolet irradiation dosage of 15 kWh m−2; and 60 thermal cycles from −40 to 85 °C.

Suggested Citation

  • Shun-Chang Liu & Chen-Min Dai & Yimeng Min & Yi Hou & Andrew H. Proppe & Ying Zhou & Chao Chen & Shiyou Chen & Jiang Tang & Ding-Jiang Xue & Edward H. Sargent & Jin-Song Hu, 2021. "An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics," Nature Communications, Nature, vol. 12(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-20955-5
    DOI: 10.1038/s41467-021-20955-5
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