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Solid-phase hetero epitaxial growth of α-phase formamidinium perovskite

Author

Listed:
  • Jin-Wook Lee

    (University of California
    SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University)

  • Shaun Tan

    (University of California)

  • Tae-Hee Han

    (University of California
    Hanyang University)

  • Rui Wang

    (University of California)

  • Lizhi Zhang

    (University of Tennessee)

  • Changwon Park

    (University of Tennessee)

  • Mina Yoon

    (Oak Ridge National Laboratory)

  • Chungseok Choi

    (University of California)

  • Mingjie Xu

    (Irvine Materials Research Institute, University of California)

  • Michael E. Liao

    (University of California)

  • Sung-Joon Lee

    (University of California)

  • Selbi Nuryyeva

    (University of California)

  • Chenhui Zhu

    (Advanced Light Source, Lawrence Berkeley National Laboratory)

  • Kenny Huynh

    (University of California)

  • Mark S. Goorsky

    (University of California)

  • Yu Huang

    (University of California)

  • Xiaoqing Pan

    (Irvine Materials Research Institute, University of California)

  • Yang Yang

    (University of California)

Abstract

Conventional epitaxy of semiconductor films requires a compatible single crystalline substrate and precisely controlled growth conditions, which limit the price competitiveness and versatility of the process. We demonstrate substrate-tolerant nano-heteroepitaxy (NHE) of high-quality formamidinium-lead-tri-iodide (FAPbI3) perovskite films. The layered perovskite templates the solid-state phase conversion of FAPbI3 from its hexagonal non-perovskite phase to the cubic perovskite polymorph, where the growth kinetics are controlled by a synergistic effect between strain and entropy. The slow heteroepitaxial crystal growth enlarged the perovskite crystals by 10-fold with a reduced defect density and strong preferred orientation. This NHE is readily applicable to various substrates used for devices. The proof-of-concept solar cell and light-emitting diode devices based on the NHE-FAPbI3 showed efficiencies and stabilities superior to those of devices fabricated without NHE.

Suggested Citation

  • Jin-Wook Lee & Shaun Tan & Tae-Hee Han & Rui Wang & Lizhi Zhang & Changwon Park & Mina Yoon & Chungseok Choi & Mingjie Xu & Michael E. Liao & Sung-Joon Lee & Selbi Nuryyeva & Chenhui Zhu & Kenny Huynh, 2020. "Solid-phase hetero epitaxial growth of α-phase formamidinium perovskite," Nature Communications, Nature, vol. 11(1), pages 1-11, December.
    • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-19237-3
    DOI: 10.1038/s41467-020-19237-3
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    Cited by:

    1. Mitrašinović, Aleksandar M., 2021. "Photovoltaics advancements for transition from renewable to clean energy," Energy, Elsevier, vol. 237(C).

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