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Vertical organic permeable dual-base transistors for logic circuits

Author

Listed:
  • Erjuan Guo

    (Technische Universität Dresden)

  • Zhongbin Wu

    (Technische Universität Dresden
    Institute of Flexible Electronics (IFE), Northwestern Polytechnical University)

  • Ghader Darbandy

    (University of Applied Sciences)

  • Shen Xing

    (Technische Universität Dresden)

  • Shu-Jen Wang

    (Technische Universität Dresden)

  • Alexander Tahn

    (Technische Universität Dresden)

  • Michael Göbel

    (Leibniz-Institut für Polymerforschung Dresden e.V. (IPF))

  • Alexander Kloes

    (University of Applied Sciences)

  • Karl Leo

    (Technische Universität Dresden)

  • Hans Kleemann

    (Technische Universität Dresden)

Abstract

The main advantage of organic transistors with dual gates/bases is that the threshold voltages can be set as a function of the applied second gate/base bias, which is crucial for the application in logic gates and integrated circuits. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we realize a device concept of vertical organic permeable dual-base transistors, where the dual base electrodes can be used to tune the threshold voltages and change the on-currents. The detailed operation mechanisms are investigated by calibrated TCAD simulations. Finally, power-efficient logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single device operating at supply voltages of

Suggested Citation

  • Erjuan Guo & Zhongbin Wu & Ghader Darbandy & Shen Xing & Shu-Jen Wang & Alexander Tahn & Michael Göbel & Alexander Kloes & Karl Leo & Hans Kleemann, 2020. "Vertical organic permeable dual-base transistors for logic circuits," Nature Communications, Nature, vol. 11(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-18576-5
    DOI: 10.1038/s41467-020-18576-5
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