Author
Listed:
- Danliang Zhang
(Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University)
- Ying Liu
(Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University)
- Mai He
(Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University)
- Ao Zhang
(Key Laboratory for Matter Microstructure and Function of Hunan Province, School of Physics and Electronics, Hunan Normal University)
- Shula Chen
(Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University)
- Qingjun Tong
(Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University)
- Lanyu Huang
(Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University)
- Zhiyuan Zhou
(Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University)
- Weihao Zheng
(Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University)
- Mingxing Chen
(Key Laboratory for Matter Microstructure and Function of Hunan Province, School of Physics and Electronics, Hunan Normal University)
- Kai Braun
(Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University
Institute of Physical and Theoretical Chemistry and LISA+, University of Tübingen)
- Alfred J. Meixner
(Institute of Physical and Theoretical Chemistry and LISA+, University of Tübingen)
- Xiao Wang
(Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University)
- Anlian Pan
(Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University)
Abstract
The generation and manipulation of spin polarization at room temperature are essential for 2D van der Waals (vdW) materials-based spin-photonic and spintronic applications. However, most of the high degree polarization is achieved at cryogenic temperatures, where the spin-valley polarization lifetime is increased. Here, we report on room temperature high-spin polarization in 2D layers by reducing its carrier lifetime via the construction of vdW heterostructures. A near unity degree of polarization is observed in PbI2 layers with the formation of type-I and type-II band aligned vdW heterostructures with monolayer WS2 and WSe2. We demonstrate that the spin polarization is related to the carrier lifetime and can be manipulated by the layer thickness, temperature, and excitation wavelength. We further elucidate the carrier dynamics and measure the polarization lifetime in these heterostructures. Our work provides a promising approach to achieve room temperature high-spin polarizations, which contribute to spin-photonics applications.
Suggested Citation
Danliang Zhang & Ying Liu & Mai He & Ao Zhang & Shula Chen & Qingjun Tong & Lanyu Huang & Zhiyuan Zhou & Weihao Zheng & Mingxing Chen & Kai Braun & Alfred J. Meixner & Xiao Wang & Anlian Pan, 2020.
"Room temperature near unity spin polarization in 2D Van der Waals heterostructures,"
Nature Communications, Nature, vol. 11(1), pages 1-8, December.
Handle:
RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-18307-w
DOI: 10.1038/s41467-020-18307-w
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