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Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature

Author

Listed:
  • Dmitrii Khokhriakov

    (Chalmers University of Technology)

  • Anamul Md. Hoque

    (Chalmers University of Technology)

  • Bogdan Karpiak

    (Chalmers University of Technology)

  • Saroj P. Dash

    (Chalmers University of Technology)

Abstract

Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical gate-tunability, interference from trivial bulk states, and heterostructure interfaces. We address these challenges by integrating two-dimensional graphene with a three-dimensional topological insulator (TI) in van der Waals heterostructures to take advantage of their remarkable spintronic properties and engineer proximity-induced spin-charge conversion phenomena. In these heterostructures, we experimentally demonstrate a gate-tunable spin-galvanic effect (SGE) at room temperature, allowing for efficient conversion of a non-equilibrium spin polarization into a transverse charge current. Systematic measurements of SGE in various device geometries via a spin switch, spin precession, and magnetization rotation experiments establish the robustness of spin-charge conversion in the Gr-TI heterostructures. Importantly, using a gate voltage, we reveal a strong electric field tunability of both amplitude and sign of the spin-galvanic signal. These findings provide an efficient route for realizing all-electrical and gate-tunable spin-orbit technology using TIs and graphene in heterostructures, which can enhance the performance and reduce power dissipation in spintronic circuits.

Suggested Citation

  • Dmitrii Khokhriakov & Anamul Md. Hoque & Bogdan Karpiak & Saroj P. Dash, 2020. "Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature," Nature Communications, Nature, vol. 11(1), pages 1-7, December.
  • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-17481-1
    DOI: 10.1038/s41467-020-17481-1
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    Cited by:

    1. Jonghyeon Choi & Jungmin Park & Seunghyeon Noh & Jaebyeong Lee & Seunghyun Lee & Daeseong Choe & Hyeonjung Jung & Junhyeon Jo & Inseon Oh & Juwon Han & Soon-Yong Kwon & Chang Won Ahn & Byoung-Chul Min, 2024. "Non-volatile Fermi level tuning for the control of spin-charge conversion at room temperature," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    2. Wenkai Zhu & Yingmei Zhu & Tong Zhou & Xianpeng Zhang & Hailong Lin & Qirui Cui & Faguang Yan & Ziao Wang & Yongcheng Deng & Hongxin Yang & Lixia Zhao & Igor Žutić & Kirill D. Belashchenko & Kaiyou Wa, 2023. "Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions," Nature Communications, Nature, vol. 14(1), pages 1-7, December.
    3. Lukas Powalla & Jonas Kiemle & Elio J. König & Andreas P. Schnyder & Johannes Knolle & Klaus Kern & Alexander Holleitner & Christoph Kastl & Marko Burghard, 2022. "Berry curvature-induced local spin polarisation in gated graphene/WTe2 heterostructures," Nature Communications, Nature, vol. 13(1), pages 1-8, December.

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