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Large magnetoelectric coupling in multiferroic oxide heterostructures assembled via epitaxial lift-off

Author

Listed:
  • D. Pesquera

    (University of Cambridge)

  • E. Khestanova

    (ITMO University)

  • M. Ghidini

    (University of Cambridge
    University of Parma
    Diamond Light Source, Chilton, Didcot)

  • S. Zhang

    (University of Cambridge
    National University of Defense Technology)

  • A. P. Rooney

    (University of Manchester)

  • F. Maccherozzi

    (Diamond Light Source, Chilton, Didcot)

  • P. Riego

    (University of Cambridge
    CIC nanoGUNE
    University of the Basque Country, UPV/EHU)

  • S. Farokhipoor

    (University of Groningen)

  • J. Kim

    (University of Cambridge)

  • X. Moya

    (University of Cambridge)

  • M. E. Vickers

    (University of Cambridge)

  • N. A. Stelmashenko

    (University of Cambridge)

  • S. J. Haigh

    (University of Manchester)

  • S. S. Dhesi

    (Diamond Light Source, Chilton, Didcot)

  • N. D. Mathur

    (University of Cambridge)

Abstract

Epitaxial films may be released from growth substrates and transferred to structurally and chemically incompatible substrates, but epitaxial films of transition metal perovskite oxides have not been transferred to electroactive substrates for voltage control of their myriad functional properties. Here we demonstrate good strain transmission at the incoherent interface between a strain-released film of epitaxially grown ferromagnetic La0.7Sr0.3MnO3 and an electroactive substrate of ferroelectric 0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 in a different crystallographic orientation. Our strain-mediated magnetoelectric coupling compares well with respect to epitaxial heterostructures, where the epitaxy responsible for strong coupling can degrade film magnetization via strain and dislocations. Moreover, the electrical switching of magnetic anisotropy is repeatable and non-volatile. High-resolution magnetic vector maps reveal that micromagnetic behaviour is governed by electrically controlled strain and cracks in the film. Our demonstration should inspire others to control the physical/chemical properties in strain-released epitaxial oxide films by using electroactive substrates to impart strain via non-epitaxial interfaces.

Suggested Citation

  • D. Pesquera & E. Khestanova & M. Ghidini & S. Zhang & A. P. Rooney & F. Maccherozzi & P. Riego & S. Farokhipoor & J. Kim & X. Moya & M. E. Vickers & N. A. Stelmashenko & S. J. Haigh & S. S. Dhesi & N., 2020. "Large magnetoelectric coupling in multiferroic oxide heterostructures assembled via epitaxial lift-off," Nature Communications, Nature, vol. 11(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-16942-x
    DOI: 10.1038/s41467-020-16942-x
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    Cited by:

    1. Qiwu Shi & Eric Parsonnet & Xiaoxing Cheng & Natalya Fedorova & Ren-Ci Peng & Abel Fernandez & Alexander Qualls & Xiaoxi Huang & Xue Chang & Hongrui Zhang & David Pesquera & Sujit Das & Dmitri Nikonov, 2022. "The role of lattice dynamics in ferroelectric switching," Nature Communications, Nature, vol. 13(1), pages 1-10, December.

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