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Mott gap collapse in lightly hole-doped Sr2−xKxIrO4

Author

Listed:
  • J. N. Nelson

    (Cornell University)

  • C. T. Parzyck

    (Cornell University)

  • B. D. Faeth

    (Cornell University)

  • J. K. Kawasaki

    (Cornell University
    Cornell University
    Kavli Institute at Cornell for Nanoscale Science
    University of Wisconsin)

  • D. G. Schlom

    (Cornell University
    Kavli Institute at Cornell for Nanoscale Science)

  • K. M. Shen

    (Cornell University
    Kavli Institute at Cornell for Nanoscale Science)

Abstract

The evolution of Sr2IrO4 upon carrier doping has been a subject of intense interest, due to its similarities to the parent cuprates, yet the intrinsic behaviour of Sr2IrO4 upon hole doping remains enigmatic. Here, we synthesize and investigate hole-doped Sr2−xKxIrO4 utilizing a combination of reactive oxide molecular-beam epitaxy, substitutional diffusion and in-situ angle-resolved photoemission spectroscopy. Upon hole doping, we observe the formation of a coherent, two-band Fermi surface, consisting of both hole pockets centred at (π, 0) and electron pockets centred at (π/2, π/2). In particular, the strong similarities between the Fermi surface topology and quasiparticle band structure of hole- and electron-doped Sr2IrO4 are striking given the different internal structure of doped electrons versus holes.

Suggested Citation

  • J. N. Nelson & C. T. Parzyck & B. D. Faeth & J. K. Kawasaki & D. G. Schlom & K. M. Shen, 2020. "Mott gap collapse in lightly hole-doped Sr2−xKxIrO4," Nature Communications, Nature, vol. 11(1), pages 1-6, December.
    • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-16425-z
    DOI: 10.1038/s41467-020-16425-z
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