Author
Listed:
- Yuze Meng
(Rensselaer Polytechnic Institute
Nanjing University)
- Tianmeng Wang
(Rensselaer Polytechnic Institute)
- Chenhao Jin
(Cornell University)
- Zhipeng Li
(Rensselaer Polytechnic Institute)
- Shengnan Miao
(Rensselaer Polytechnic Institute)
- Zhen Lian
(Rensselaer Polytechnic Institute)
- Takashi Taniguchi
(National Institute for Materials Science)
- Kenji Watanabe
(National Institute for Materials Science)
- Fengqi Song
(Nanjing University)
- Su-Fei Shi
(Rensselaer Polytechnic Institute
Rensselaer Polytechnic Institute)
Abstract
The heterostructure of monolayer transition metal dichalcogenides (TMDCs) provides a unique platform to manipulate exciton dynamics. The ultrafast carrier transfer across the van der Waals interface of the TMDC hetero-bilayer can efficiently separate electrons and holes in the intralayer excitons with a type II alignment, but it will funnel excitons into one layer with a type I alignment. In this work, we demonstrate the reversible switch from exciton dissociation to exciton funneling in a MoSe2/WS2 heterostructure, which manifests itself as the photoluminescence (PL) quenching to PL enhancement transition. This transition was realized through effectively controlling the quantum capacitance of both MoSe2 and WS2 layers with gating. PL excitation spectroscopy study unveils that PL enhancement arises from the blockage of the optically excited electron transfer from MoSe2 to WS2. Our work demonstrates electrical control of photoexcited carrier transfer across the van der Waals interface, the understanding of which promises applications in quantum optoelectronics.
Suggested Citation
Yuze Meng & Tianmeng Wang & Chenhao Jin & Zhipeng Li & Shengnan Miao & Zhen Lian & Takashi Taniguchi & Kenji Watanabe & Fengqi Song & Su-Fei Shi, 2020.
"Electrical switching between exciton dissociation to exciton funneling in MoSe2/WS2 heterostructure,"
Nature Communications, Nature, vol. 11(1), pages 1-6, December.
Handle:
RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-16419-x
DOI: 10.1038/s41467-020-16419-x
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