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Colossal flexoresistance in dielectrics

Author

Listed:
  • Sung Min Park

    (Institute for Basic Science (IBS)
    Seoul National University)

  • Bo Wang

    (The Pennsylvania State University)

  • Tula Paudel

    (University of Nebraska)

  • Se Young Park

    (Institute for Basic Science (IBS)
    Seoul National University
    Soongsil University)

  • Saikat Das

    (Institute for Basic Science (IBS)
    Seoul National University)

  • Jeong Rae Kim

    (Institute for Basic Science (IBS)
    Seoul National University)

  • Eun Kyo Ko

    (Institute for Basic Science (IBS)
    Seoul National University)

  • Han Gyeol Lee

    (Institute for Basic Science (IBS)
    Seoul National University)

  • Nahee Park

    (Sungkyunkwan University)

  • Lingling Tao

    (University of Nebraska)

  • Dongseok Suh

    (Sungkyunkwan University)

  • Evgeny Y. Tsymbal

    (University of Nebraska)

  • Long-Qing Chen

    (The Pennsylvania State University)

  • Tae Won Noh

    (Institute for Basic Science (IBS)
    Seoul National University)

  • Daesu Lee

    (Pohang University of Science and Technology (POSTECH)
    Asia Pacific Center for Theoretical Physics)

Abstract

Dielectrics have long been considered as unsuitable for pure electrical switches; under weak electric fields, they show extremely low conductivity, whereas under strong fields, they suffer from irreversible damage. Here, we show that flexoelectricity enables damage-free exposure of dielectrics to strong electric fields, leading to reversible switching between electrical states—insulating and conducting. Applying strain gradients with an atomic force microscope tip polarizes an ultrathin film of an archetypal dielectric SrTiO3 via flexoelectricity, which in turn generates non-destructive, strong electrostatic fields. When the applied strain gradient exceeds a certain value, SrTiO3 suddenly becomes highly conductive, yielding at least around a 108-fold decrease in room-temperature resistivity. We explain this phenomenon, which we call the colossal flexoresistance, based on the abrupt increase in the tunneling conductance of ultrathin SrTiO3 under strain gradients. Our work extends the scope of electrical control in solids, and inspires further exploration of dielectric responses to strong electromechanical fields.

Suggested Citation

  • Sung Min Park & Bo Wang & Tula Paudel & Se Young Park & Saikat Das & Jeong Rae Kim & Eun Kyo Ko & Han Gyeol Lee & Nahee Park & Lingling Tao & Dongseok Suh & Evgeny Y. Tsymbal & Long-Qing Chen & Tae Wo, 2020. "Colossal flexoresistance in dielectrics," Nature Communications, Nature, vol. 11(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-16207-7
    DOI: 10.1038/s41467-020-16207-7
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