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A highly CMOS compatible hafnia-based ferroelectric diode

Author

Listed:
  • Qing Luo

    (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences)

  • Yan Cheng

    (Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University)

  • Jianguo Yang

    (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences)

  • Rongrong Cao

    (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences)

  • Haili Ma

    (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences)

  • Yang Yang

    (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences)

  • Rong Huang

    (Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University)

  • Wei Wei

    (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences)

  • Yonghui Zheng

    (Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University)

  • Tiancheng Gong

    (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences)

  • Jie Yu

    (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences)

  • Xiaoxin Xu

    (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences)

  • Peng Yuan

    (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences)

  • Xiaoyan Li

    (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences)

  • Lu Tai

    (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences)

  • Haoran Yu

    (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences)

  • Dashan Shang

    (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences)

  • Qi Liu

    (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences)

  • Bing Yu

    (Xi’an UniIC Semiconductors Co., Ltd.)

  • Qiwei Ren

    (Xi’an UniIC Semiconductors Co., Ltd.)

  • Hangbing Lv

    (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences)

  • Ming Liu

    (Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences)

Abstract

Memory devices with high speed and high density are highly desired to address the ‘memory wall’ issue. Here we demonstrated a highly scalable, three-dimensional stackable ferroelectric diode, with its rectifying polarity modulated by the polarization reversal of Hf0.5Zr0.5O2 films. By visualizing the hafnium/zirconium lattice order and oxygen lattice order with atomic-resolution spherical aberration-corrected STEM, we revealed the correlation between the spontaneous polarization of Hf0.5Zr0.5O2 film and the displacement of oxygen atom, thus unambiguously identified the non-centrosymmetric Pca21 orthorhombic phase in Hf0.5Zr0.5O2 film. We further implemented this ferroelectric diode in an 8 layers 3D array. Operation speed as high as 20 ns and robust endurance of more than 109 were demonstrated. The built-in nonlinearity of more than 100 guarantees its self-selective property that eliminates the need for external selectors to suppress the leakage current in large array. This work opens up new opportunities for future memory hierarchy evolution.

Suggested Citation

  • Qing Luo & Yan Cheng & Jianguo Yang & Rongrong Cao & Haili Ma & Yang Yang & Rong Huang & Wei Wei & Yonghui Zheng & Tiancheng Gong & Jie Yu & Xiaoxin Xu & Peng Yuan & Xiaoyan Li & Lu Tai & Haoran Yu & , 2020. "A highly CMOS compatible hafnia-based ferroelectric diode," Nature Communications, Nature, vol. 11(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-15159-2
    DOI: 10.1038/s41467-020-15159-2
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    Cited by:

    1. Guangdi Feng & Qiuxiang Zhu & Xuefeng Liu & Luqiu Chen & Xiaoming Zhao & Jianquan Liu & Shaobing Xiong & Kexiang Shan & Zhenzhong Yang & Qinye Bao & Fangyu Yue & Hui Peng & Rong Huang & Xiaodong Tang , 2024. "A ferroelectric fin diode for robust non-volatile memory," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    2. Qingxuan Li & Siwei Wang & Zhenhai Li & Xuemeng Hu & Yongkai Liu & Jiajie Yu & Yafen Yang & Tianyu Wang & Jialin Meng & Qingqing Sun & David Wei Zhang & Lin Chen, 2024. "High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    3. Yue Niu & Lei Li & Zhiying Qi & Hein Htet Aung & Xinyi Han & Reshef Tenne & Yugui Yao & Alla Zak & Yao Guo, 2023. "0D van der Waals interfacial ferroelectricity," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    4. Yueyang Jia & Qianqian Yang & Yue-Wen Fang & Yue Lu & Maosong Xie & Jianyong Wei & Jianjun Tian & Linxing Zhang & Rui Yang, 2024. "Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions," Nature Communications, Nature, vol. 15(1), pages 1-9, December.

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