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Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

Author

Listed:
  • Matthias Niethammer

    (University of Stuttgart)

  • Matthias Widmann

    (University of Stuttgart)

  • Torsten Rendler

    (University of Stuttgart)

  • Naoya Morioka

    (University of Stuttgart)

  • Yu-Chen Chen

    (University of Stuttgart)

  • Rainer Stöhr

    (University of Stuttgart)

  • Jawad Ul Hassan

    (Linköping University)

  • Shinobu Onoda

    (National Institutes for Quantum and Radiological Science and Technology)

  • Takeshi Ohshima

    (National Institutes for Quantum and Radiological Science and Technology)

  • Sang-Yun Lee

    (Korea Institute of Science and Technology)

  • Amlan Mukherjee

    (University of Stuttgart)

  • Junichi Isoya

    (University of Tsukuba)

  • Nguyen Tien Son

    (Linköping University)

  • Jörg Wrachtrup

    (University of Stuttgart
    Max Planck Institute for Solid State Research)

Abstract

Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects, the approach presented here holds promises for scalability of future SiC quantum devices.

Suggested Citation

  • Matthias Niethammer & Matthias Widmann & Torsten Rendler & Naoya Morioka & Yu-Chen Chen & Rainer Stöhr & Jawad Ul Hassan & Shinobu Onoda & Takeshi Ohshima & Sang-Yun Lee & Amlan Mukherjee & Junichi Is, 2019. "Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions," Nature Communications, Nature, vol. 10(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-13545-z
    DOI: 10.1038/s41467-019-13545-z
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    Cited by:

    1. Aaron M. Day & Madison Sutula & Jonathan R. Dietz & Alexander Raun & Denis D. Sukachev & Mihir K. Bhaskar & Evelyn L. Hu, 2024. "Electrical manipulation of telecom color centers in silicon," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    2. Elizabeth M. Y. Lee & Alvin Yu & Juan J. de Pablo & Giulia Galli, 2021. "Stability and molecular pathways to the formation of spin defects in silicon carbide," Nature Communications, Nature, vol. 12(1), pages 1-8, December.

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