IDEAS home Printed from https://ideas.repec.org/a/nat/natcom/v10y2019i1d10.1038_s41467-019-13545-z.html
   My bibliography  Save this article

Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

Author

Listed:
  • Matthias Niethammer

    (University of Stuttgart)

  • Matthias Widmann

    (University of Stuttgart)

  • Torsten Rendler

    (University of Stuttgart)

  • Naoya Morioka

    (University of Stuttgart)

  • Yu-Chen Chen

    (University of Stuttgart)

  • Rainer Stöhr

    (University of Stuttgart)

  • Jawad Ul Hassan

    (Linköping University)

  • Shinobu Onoda

    (National Institutes for Quantum and Radiological Science and Technology)

  • Takeshi Ohshima

    (National Institutes for Quantum and Radiological Science and Technology)

  • Sang-Yun Lee

    (Korea Institute of Science and Technology)

  • Amlan Mukherjee

    (University of Stuttgart)

  • Junichi Isoya

    (University of Tsukuba)

  • Nguyen Tien Son

    (Linköping University)

  • Jörg Wrachtrup

    (University of Stuttgart
    Max Planck Institute for Solid State Research)

Abstract

Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects, the approach presented here holds promises for scalability of future SiC quantum devices.

Suggested Citation

  • Matthias Niethammer & Matthias Widmann & Torsten Rendler & Naoya Morioka & Yu-Chen Chen & Rainer Stöhr & Jawad Ul Hassan & Shinobu Onoda & Takeshi Ohshima & Sang-Yun Lee & Amlan Mukherjee & Junichi Is, 2019. "Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions," Nature Communications, Nature, vol. 10(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-13545-z
    DOI: 10.1038/s41467-019-13545-z
    as

    Download full text from publisher

    File URL: https://www.nature.com/articles/s41467-019-13545-z
    File Function: Abstract
    Download Restriction: no
    File URL: https://libkey.io/10.1038/s41467-019-13545-z?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    Citations

    Citations are extracted by the CitEc Project, subscribe to its RSS feed for this item.
    as


    Cited by:

    1. Elizabeth M. Y. Lee & Alvin Yu & Juan J. de Pablo & Giulia Galli, 2021. "Stability and molecular pathways to the formation of spin defects in silicon carbide," Nature Communications, Nature, vol. 12(1), pages 1-8, December.

    More about this item

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-13545-z. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Sonal Shukla or Springer Nature Abstracting and Indexing (email available below). General contact details of provider: http://www.nature.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.