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Room-temperature quantum interference in single perovskite quantum dot junctions

Author

Listed:
  • Haining Zheng

    (Xiamen University)

  • Songjun Hou

    (Lancaster University)

  • Chenguang Xin

    (Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Key Laboratory of Optical Information Science and Technology of Ministry of Education, Nankai University)

  • Qingqing Wu

    (Lancaster University)

  • Feng Jiang

    (Xiamen University)

  • Zhibing Tan

    (Xiamen University)

  • Xin Zhou

    (Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Key Laboratory of Optical Information Science and Technology of Ministry of Education, Nankai University)

  • Luchun Lin

    (Xiamen University)

  • Wenxiang He

    (Xiamen University)

  • Qingmin Li

    (Xiamen University)

  • Jueting Zheng

    (Xiamen University)

  • Longyi Zhang

    (Xiamen University)

  • Junyang Liu

    (Xiamen University)

  • Yang Yang

    (Xiamen University)

  • Jia Shi

    (Xiamen University)

  • Xiaodan Zhang

    (Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Key Laboratory of Optical Information Science and Technology of Ministry of Education, Nankai University)

  • Ying Zhao

    (Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Key Laboratory of Optical Information Science and Technology of Ministry of Education, Nankai University)

  • Yuelong Li

    (Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Key Laboratory of Optical Information Science and Technology of Ministry of Education, Nankai University)

  • Colin Lambert

    (Lancaster University)

  • Wenjing Hong

    (Xiamen University)

Abstract

The studies of quantum interference effects through bulk perovskite materials at the Ångstrom scale still remain as a major challenge. Herein, we provide the observation of room-temperature quantum interference effects in metal halide perovskite quantum dots (QDs) using the mechanically controllable break junction technique. Single-QD conductance measurements reveal that there are multiple conductance peaks for the CH3NH3PbBr3 and CH3NH3PbBr2.15Cl0.85 QDs, whose displacement distributions match the lattice constant of QDs, suggesting that the gold electrodes slide through different lattice sites of the QD via Au-halogen coupling. We also observe a distinct conductance ‘jump’ at the end of the sliding process, which is further evidence that quantum interference effects dominate charge transport in these single-QD junctions. This conductance ‘jump’ is also confirmed by our theoretical calculations utilizing density functional theory combined with quantum transport theory. Our measurements and theory create a pathway to exploit quantum interference effects in quantum-controlled perovskite materials.

Suggested Citation

  • Haining Zheng & Songjun Hou & Chenguang Xin & Qingqing Wu & Feng Jiang & Zhibing Tan & Xin Zhou & Luchun Lin & Wenxiang He & Qingmin Li & Jueting Zheng & Longyi Zhang & Junyang Liu & Yang Yang & Jia S, 2019. "Room-temperature quantum interference in single perovskite quantum dot junctions," Nature Communications, Nature, vol. 10(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-13389-7
    DOI: 10.1038/s41467-019-13389-7
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