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Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction

Author

Listed:
  • Ki Seok Kim

    (Sungkyunkwan University)

  • You Jin Ji

    (Sungkyunkwan University)

  • Ki Hyun Kim

    (Sungkyunkwan University)

  • Seunghyuk Choi

    (Sungkyunkwan University)

  • Dong-Ho Kang

    (Nanyang Technological University
    School of Electronic and Electrical Engineering Sungkyunkwan University)

  • Keun Heo

    (School of Electronic and Electrical Engineering Sungkyunkwan University)

  • Seongjae Cho

    (Gachon University)

  • Soonmin Yim

    (The University of Chicago
    School of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST))

  • Sungjoo Lee

    (Sungkyunkwan University)

  • Jin-Hong Park

    (School of Electronic and Electrical Engineering Sungkyunkwan University)

  • Yeon Sik Jung

    (School of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST))

  • Geun Young Yeom

    (Sungkyunkwan University
    Sungkyunkwan University)

Abstract

The recent reports of various photodetectors based on molybdenum disulfide (MoS2) field effect transistors showed that it was difficult to obtain optoelectronic performances in the broad detection range [visible–infrared (IR)] applicable to various fields. Here, by forming a mono-/multi-layer nano-bridge multi-heterojunction structure (more than > 300 junctions with 25 nm intervals) through the selective layer control of multi-layer MoS2, a photodetector with ultrasensitive optoelectronic performances in a broad spectral range (photoresponsivity of 2.67 × 106 A/W at λ = 520 nm and 1.65 × 104 A/W at λ = 1064 nm) superior to the previously reported MoS2-based photodetectors could be successfully fabricated. The nano-bridge multi-heterojunction is believed to be an important device technology that can be applied to broadband light sensing, highly sensitive fluorescence imaging, ultrasensitive biomedical diagnostics, and ultrafast optoelectronic integrated circuits through the formation of a nanoscale serial multi-heterojunction, just by adding a selective layer control process.

Suggested Citation

  • Ki Seok Kim & You Jin Ji & Ki Hyun Kim & Seunghyuk Choi & Dong-Ho Kang & Keun Heo & Seongjae Cho & Soonmin Yim & Sungjoo Lee & Jin-Hong Park & Yeon Sik Jung & Geun Young Yeom, 2019. "Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction," Nature Communications, Nature, vol. 10(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-12592-w
    DOI: 10.1038/s41467-019-12592-w
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    Cited by:

    1. Jian Zhou & Chunchen Zhang & Li Shi & Xiaoqing Chen & Tae Soo Kim & Minseung Gyeon & Jian Chen & Jinlan Wang & Linwei Yu & Xinran Wang & Kibum Kang & Emanuele Orgiu & Paolo Samorì & Kenji Watanabe & T, 2022. "Non-invasive digital etching of van der Waals semiconductors," Nature Communications, Nature, vol. 13(1), pages 1-8, December.

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