Author
Listed:
- Wei Han
(Huazhong University of Science and Technology (HUST))
- Pu Huang
(Shenzhen University)
- Liang Li
(Huazhong University of Science and Technology (HUST))
- Fakun Wang
(Huazhong University of Science and Technology (HUST))
- Peng Luo
(Huazhong University of Science and Technology (HUST))
- Kailang Liu
(Huazhong University of Science and Technology (HUST))
- Xing Zhou
(Huazhong University of Science and Technology (HUST))
- Huiqiao Li
(Huazhong University of Science and Technology (HUST)
Stanford University)
- Xiuwen Zhang
(Shenzhen University)
- Yi Cui
(Stanford University)
- Tianyou Zhai
(Huazhong University of Science and Technology (HUST))
Abstract
Two-dimensional molecular crystals, consisting of zero-dimensional molecules, are very appealing due to their novel physical properties. However, they are mostly limited to organic molecules. The synthesis of inorganic version of two-dimensional molecular crystals is still a challenge due to the difficulties in controlling the crystal phase and growth plane. Here, we design a passivator-assisted vapor deposition method for the growth of two-dimensional Sb2O3 inorganic molecular crystals as thin as monolayer. The passivator can prevent the heterophase nucleation and suppress the growth of low-energy planes, and enable the molecule-by-molecule lateral growth along high-energy planes. Using Raman spectroscopy and in situ transmission electron microscopy, we show that the insulating α-phase of Sb2O3 flakes can be transformed into semiconducting β-phase under heat and electron-beam irradiation. Our findings can be extended to the controlled growth of other two-dimensional inorganic molecular crystals and open up opportunities for potential molecular electronic devices.
Suggested Citation
Wei Han & Pu Huang & Liang Li & Fakun Wang & Peng Luo & Kailang Liu & Xing Zhou & Huiqiao Li & Xiuwen Zhang & Yi Cui & Tianyou Zhai, 2019.
"Two-dimensional inorganic molecular crystals,"
Nature Communications, Nature, vol. 10(1), pages 1-10, December.
Handle:
RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-12569-9
DOI: 10.1038/s41467-019-12569-9
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