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Disorder compensation controls doping efficiency in organic semiconductors

Author

Listed:
  • Artem Fediai

    (Hermann-von-Helmholtz-Platz 1)

  • Franz Symalla

    (Nanomatch GmbH, Hermann-von-Helmholtz-Platz 1)

  • Pascal Friederich

    (Hermann-von-Helmholtz-Platz 1
    University of Toronto)

  • Wolfgang Wenzel

    (Hermann-von-Helmholtz-Platz 1)

Abstract

Conductivity doping of inorganic and organic semiconductors enables a fantastic variety of highly-efficient electronic devices. While well understood for inorganic materials, the mechanism of doping-induced conductivity and Fermi level shift in organic semiconductors remains elusive. In microscopic simulations with full treatment of many-body Coulomb effects, we reproduce the Fermi level shift in agreement with experimental observations. We find that the additional disorder introduced by doping can actually compensate the intrinsic disorder of the material, such that the total disorder remains constant or is even reduced at doping molar ratios relevant to experiment. In addition to the established dependence of the doping-induced states on the Coulomb interaction in the ionized host-dopant pair, we find that the position of the Fermi level and electrical conductivity is controlled by disorder compensation. By providing a quantitative model for doping in organic semiconductors we enable the predictive design of more efficient redox pairs.

Suggested Citation

  • Artem Fediai & Franz Symalla & Pascal Friederich & Wolfgang Wenzel, 2019. "Disorder compensation controls doping efficiency in organic semiconductors," Nature Communications, Nature, vol. 10(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-12526-6
    DOI: 10.1038/s41467-019-12526-6
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    Cited by:

    1. Miao Xiong & Xin-Yu Deng & Shuang-Yan Tian & Kai-Kai Liu & Yu-Hui Fang & Juan-Rong Wang & Yunfei Wang & Guangchao Liu & Jupeng Chen & Diego Rosas Villalva & Derya Baran & Xiaodan Gu & Ting Lei, 2024. "Counterion docking: a general approach to reducing energetic disorder in doped polymeric semiconductors," Nature Communications, Nature, vol. 15(1), pages 1-10, December.
    2. Jonas Armleder & Tobias Neumann & Franz Symalla & Timo Strunk & Jorge Enrique Olivares Peña & Wolfgang Wenzel & Artem Fediai, 2023. "Controlling doping efficiency in organic semiconductors by tuning short-range overscreening," Nature Communications, Nature, vol. 14(1), pages 1-9, December.

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