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Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

Author

Listed:
  • Lei Yin

    (National Center for Nanoscience and Technology
    University of Chinese Academy of Science)

  • Peng He

    (National Center for Nanoscience and Technology
    University of Chinese Academy of Science)

  • Ruiqing Cheng

    (National Center for Nanoscience and Technology
    University of Chinese Academy of Science)

  • Feng Wang

    (National Center for Nanoscience and Technology)

  • Fengmei Wang

    (National Center for Nanoscience and Technology)

  • Zhenxing Wang

    (National Center for Nanoscience and Technology
    University of Chinese Academy of Science)

  • Yao Wen

    (National Center for Nanoscience and Technology
    University of Chinese Academy of Science)

  • Jun He

    (National Center for Nanoscience and Technology
    University of Chinese Academy of Science
    Wuhan University)

Abstract

Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most studies focus on eliminating this trap effect, and little consideration was devoted to the applications of their inherent capabilities on electronics. Here, we report the realization of robust trap effect, which can capture carriers and store them steadily, in two-dimensional MoS2xSe2(1-x) via synergistic effect of sulphur vacancies and isoelectronic selenium atoms. As a result, infrared detection with very high photoresponsivity (2.4 × 105 A W−1) and photoswitching ratio (~108), as well as nonvolatile infrared memory with high program/erase ratio (~108) and fast switching time, are achieved just based on an individual flake. This demonstration of defect engineering opens up an avenue for achieving high-performance infrared detector and memory.

Suggested Citation

  • Lei Yin & Peng He & Ruiqing Cheng & Feng Wang & Fengmei Wang & Zhenxing Wang & Yao Wen & Jun He, 2019. "Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices," Nature Communications, Nature, vol. 10(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-12200-x
    DOI: 10.1038/s41467-019-12200-x
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    Cited by:

    1. Ruiqing Cheng & Lei Yin & Yao Wen & Baoxing Zhai & Yuzheng Guo & Zhaofu Zhang & Weitu Liao & Wenqi Xiong & Hao Wang & Shengjun Yuan & Jian Jiang & Chuansheng Liu & Jun He, 2022. "Ultrathin ferrite nanosheets for room-temperature two-dimensional magnetic semiconductors," Nature Communications, Nature, vol. 13(1), pages 1-9, December.

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