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Giant piezoresistive effect by optoelectronic coupling in a heterojunction

Author

Listed:
  • Thanh Nguyen

    (Griffith University)

  • Toan Dinh

    (Griffith University)

  • Abu Riduan Md Foisal

    (Griffith University)

  • Hoang-Phuong Phan

    (Griffith University)

  • Tuan-Khoa Nguyen

    (Griffith University)

  • Nam-Trung Nguyen

    (Griffith University)

  • Dzung Viet Dao

    (Griffith University
    Griffith University)

Abstract

Enhancing the piezoresistive effect is crucial for improving the sensitivity of mechanical sensors. Herein, we report that the piezoresistive effect in a semiconductor heterojunction can be enormously enhanced via optoelectronic coupling. A lateral photovoltage, which is generated in the top material layer of a heterojunction under non-uniform illumination, can be coupled with an optimally tuned electric current to modulate the magnitude of the piezoresistive effect. We demonstrate a tuneable giant piezoresistive effect in a cubic silicon carbide/silicon heterojunction, resulting in an extraordinarily high gauge factor of approximately 58,000, which is the highest gauge factor reported for semiconductor-based mechanical sensors to date. This gauge factor is approximately 30,000 times greater than that of commercial metal strain gauges and more than 2,000 times greater than that of cubic silicon carbide. The phenomenon discovered can pave the way for the development of ultra-sensitive sensor technology.

Suggested Citation

  • Thanh Nguyen & Toan Dinh & Abu Riduan Md Foisal & Hoang-Phuong Phan & Tuan-Khoa Nguyen & Nam-Trung Nguyen & Dzung Viet Dao, 2019. "Giant piezoresistive effect by optoelectronic coupling in a heterojunction," Nature Communications, Nature, vol. 10(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-11965-5
    DOI: 10.1038/s41467-019-11965-5
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