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Self-selective van der Waals heterostructures for large scale memory array

Author

Listed:
  • Linfeng Sun

    (Sungkyunkwan University)

  • Yishu Zhang

    (Singapore University of Technology & Design)

  • Gyeongtak Han

    (Sungkyunkwan University)

  • Geunwoo Hwang

    (Sungkyunkwan University)

  • Jinbao Jiang

    (Sungkyunkwan University
    Institute for Basic Science, Sungkyunkwan University)

  • Bomin Joo

    (Sungkyunkwan University)

  • Kenji Watanabe

    (National Institute for Materials Science)

  • Takashi Taniguchi

    (National Institute for Materials Science)

  • Young-Min Kim

    (Sungkyunkwan University
    Institute for Basic Science, Sungkyunkwan University)

  • Woo Jong Yu

    (Sungkyunkwan University)

  • Bai-Sun Kong

    (Sungkyunkwan University)

  • Rong Zhao

    (Singapore University of Technology & Design)

  • Heejun Yang

    (Sungkyunkwan University)

Abstract

The large-scale crossbar array is a promising architecture for hardware-amenable energy efficient three-dimensional memory and neuromorphic computing systems. While accessing a memory cell with negligible sneak currents remains a fundamental issue in the crossbar array architecture, up-to-date memory cells for large-scale crossbar arrays suffer from process and device integration (one selector one resistor) or destructive read operation (complementary resistive switching). Here, we introduce a self-selective memory cell based on hexagonal boron nitride and graphene in a vertical heterostructure. Combining non-volatile and volatile memory operations in the two hexagonal boron nitride layers, we demonstrate a self-selectivity of 1010 with an on/off resistance ratio larger than 103. The graphene layer efficiently blocks the diffusion of volatile silver filaments to integrate the volatile and non-volatile kinetics in a novel way. Our self-selective memory minimizes sneak currents on large-scale memory operation, thereby achieving a practical readout margin for terabit-scale and energy-efficient memory integration.

Suggested Citation

  • Linfeng Sun & Yishu Zhang & Gyeongtak Han & Geunwoo Hwang & Jinbao Jiang & Bomin Joo & Kenji Watanabe & Takashi Taniguchi & Young-Min Kim & Woo Jong Yu & Bai-Sun Kong & Rong Zhao & Heejun Yang, 2019. "Self-selective van der Waals heterostructures for large scale memory array," Nature Communications, Nature, vol. 10(1), pages 1-7, December.
  • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-11187-9
    DOI: 10.1038/s41467-019-11187-9
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    Cited by:

    1. Thanh Luan Phan & Sohyeon Seo & Yunhee Cho & Quoc An Vu & Young Hee Lee & Dinh Loc Duong & Hyoyoung Lee & Woo Jong Yu, 2022. "CNT-molecule-CNT (1D-0D-1D) van der Waals integration ferroelectric memory with 1-nm2 junction area," Nature Communications, Nature, vol. 13(1), pages 1-8, December.

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