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Interface-based tuning of Rashba spin-orbit interaction in asymmetric oxide heterostructures with 3d electrons

Author

Listed:
  • Weinan Lin

    (National University of Singapore
    Nanyang Technological University)

  • Lei Li

    (Chinese Academy of Sciences
    Chinese Academy of Sciences)

  • Fatih Doğan

    (American University of the Middle East
    King Abdullah University of Science and Technology)

  • Changjian Li

    (National University of Singapore)

  • Hélène Rotella

    (CNRS UMR 6508)

  • Xiaojiang Yu

    (National University of Singapore)

  • Bangmin Zhang

    (National University of Singapore)

  • Yangyang Li

    (National University of Singapore)

  • Wen Siang Lew

    (Nanyang Technological University)

  • Shijie Wang

    (Institute of Materials Research and Engineering)

  • Wilfrid Prellier

    (CNRS UMR 6508)

  • Stephen J. Pennycook

    (National University of Singapore)

  • Jingsheng Chen

    (National University of Singapore)

  • Zhicheng Zhong

    (Chinese Academy of Sciences
    Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Aurelien Manchon

    (King Abdullah University of Science and Technology)

  • Tom Wu

    (University of New South Wales (UNSW))

Abstract

The Rashba effect plays important roles in emerging quantum materials physics and potential spintronic applications, entailing both the spin orbit interaction (SOI) and broken inversion symmetry. In this work, we devise asymmetric oxide heterostructures of LaAlO3//SrTiO3/LaAlO3 (LAO//STO/LAO) to study the Rashba effect in STO with an initial centrosymmetric structure, and broken inversion symmetry is created by the inequivalent bottom and top interfaces due to their opposite polar discontinuities. Furthermore, we report the observation of a transition from the cubic Rashba effect to the coexistence of linear and cubic Rashba effects in the oxide heterostructures, which is controlled by the filling of Ti orbitals. Such asymmetric oxide heterostructures with initially centrosymmetric materials provide a general strategy for tuning the Rashba SOI in artificial quantum materials.

Suggested Citation

  • Weinan Lin & Lei Li & Fatih Doğan & Changjian Li & Hélène Rotella & Xiaojiang Yu & Bangmin Zhang & Yangyang Li & Wen Siang Lew & Shijie Wang & Wilfrid Prellier & Stephen J. Pennycook & Jingsheng Chen , 2019. "Interface-based tuning of Rashba spin-orbit interaction in asymmetric oxide heterostructures with 3d electrons," Nature Communications, Nature, vol. 10(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-10961-z
    DOI: 10.1038/s41467-019-10961-z
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