Author
Listed:
- Miao Jiang
(The University of Tokyo)
- Hirokatsu Asahara
(The University of Tokyo)
- Shoichi Sato
(The University of Tokyo)
- Toshiki Kanaki
(The University of Tokyo)
- Hiroki Yamasaki
(The University of Tokyo)
- Shinobu Ohya
(The University of Tokyo
The University of Tokyo
The University of Tokyo)
- Masaaki Tanaka
(The University of Tokyo
The University of Tokyo)
Abstract
Spin–orbit torque (SOT), which is induced by an in-plane electric current via large spin-orbit coupling, enables an innovative method of manipulating the magnetization of ferromagnets by means of current injection. In conventional SOT bilayer systems, the magnetization switching efficiency strongly depends on the interface quality and the strength of the intrinsic spin Hall Effect. Here, we demonstrate highly efficient full SOT switching achieved by applying a current in a single layer of perpendicularly magnetized ferromagnetic semiconductor GaMnAs with an extremely small current density of ∼3.4 × 105 A cm−2, which is two orders of magnitude smaller than that needed in typical metal bilayer systems. This low required current density is attributed to the intrinsic bulk inversion asymmetry of GaMnAs as well as its high-quality single crystallinity and large spin polarization. Our findings will contribute to advancements in the electrical control of magnetism and its practical application in semiconductor devices.
Suggested Citation
Miao Jiang & Hirokatsu Asahara & Shoichi Sato & Toshiki Kanaki & Hiroki Yamasaki & Shinobu Ohya & Masaaki Tanaka, 2019.
"Efficient full spin–orbit torque switching in a single layer of a perpendicularly magnetized single-crystalline ferromagnet,"
Nature Communications, Nature, vol. 10(1), pages 1-6, December.
Handle:
RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-10553-x
DOI: 10.1038/s41467-019-10553-x
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