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Scaling growth rates for perovskite oxide virtual substrates on silicon

Author

Listed:
  • Jason Lapano

    (Pennsylvania State University)

  • Matthew Brahlek

    (Pennsylvania State University
    Oak Ridge National Lab)

  • Lei Zhang

    (University of California)

  • Joseph Roth

    (Pennsylvania State University)

  • Alexej Pogrebnyakov

    (Pennsylvania State University)

  • Roman Engel-Herbert

    (Pennsylvania State University
    Pennsylvania State University
    Pennsylvania State University)

Abstract

The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO3 exceeding 600 nm hr−1. This tenfold increase in growth rate compared to SrTiO3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.

Suggested Citation

  • Jason Lapano & Matthew Brahlek & Lei Zhang & Joseph Roth & Alexej Pogrebnyakov & Roman Engel-Herbert, 2019. "Scaling growth rates for perovskite oxide virtual substrates on silicon," Nature Communications, Nature, vol. 10(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-10273-2
    DOI: 10.1038/s41467-019-10273-2
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